深次微米金氧半電晶體之高頻元件分析與其在高頻電路上應用

DC 欄位	值	語言
DC.contributor	電機工程學系	zh_TW
DC.creator	陳怡伶	zh_TW
DC.creator	Yi-Ling Chen	en_US
dc.date.accessioned	2005-6-28T07:39:07Z
dc.date.available	2005-6-28T07:39:07Z
dc.date.issued	2005
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=92521053
dc.contributor.department	電機工程學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	本論文以矽半導體製程，所製作之高頻金氧半電晶體為主軸，藉由與矽晶圓廠之計畫合作案，來了解次微米元件特性，並學習設計射頻電路。首先於第二章裡，針對0.13μm製程之P型金氧半電晶體，利用高頻量測系統測試元件，並藉由所量得之資料，加以探討元件於50 MHz~20.05 GHz之高頻特色，並試著建立其高頻元件模型，並針對元件之高頻與功率特性，討論其最佳之佈局。在第三章中，相同藉由量測0.13μm P型金氧半電晶體元件，於高頻與低頻下之雜訊表現，並比較N型與P型金氧半電晶體之低頻雜訊。相同地，亦針對元件之雜訊特性，討論其最佳之佈局。第四章裡，利用0.18μm之1P6M製程，試著設計915 MHz之被動式射頻辨識系統。	zh_TW
dc.description.abstract	With the technology of Si-base device scaling down, CMOS had the better high frequency performance to design the consumption wireless products. Thus, this thesis is a study with the sub-micron CMOS technology. It had understood the high frequency characteristic by cooperating with the project of the silicon foundry, and learned the radio frequency circuit design. In chapter 2 and 3, it will be to discuss the high frequency, power performance and noise characteristic of 0.13μm CMOS high frequency devices. Then, t the optimum layout structure for theses performances will be considered and defined. A passive UHF RFID system was described in chapter 4. Some frond-end circuits of the reader terminal will be tried to realize by using 0.18μm 1P6M CMOS process.	en_US
DC.subject	高頻元件	zh_TW
DC.subject	次微米電晶體	zh_TW
DC.subject	sub-micro MOSFET	en_US
DC.subject	high frequency device	en_US
DC.title	深次微米金氧半電晶體之高頻元件分析與其在高頻電路上應用	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	The Characteristics of Sub-micro CMOS technology and Analysis Application in RFIC Design	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US

博碩士論文 92521053 完整後設資料紀錄