博碩士論文 92521059 完整後設資料紀錄

DC 欄位 語言
DC.contributor電機工程學系zh_TW
DC.creator邱培晉zh_TW
DC.creatorPei-Chin Chiuen_US
dc.date.accessioned2005-7-21T07:39:07Z
dc.date.available2005-7-21T07:39:07Z
dc.date.issued2005
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=92521059
dc.contributor.department電機工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本論文針對利用有機金屬氣相磊晶法成長氮砷化銦鎵量子井做一系列的討論,包括磊晶參數的影響,以及改善量子井光學特性的方法,另外觀察釐清氮砷化銦鎵量子井成長在含鋁的磊晶層上光學特性會出現衰化的現象,主要是因為有機金屬氣相磊晶系統內的鋁殘留現象,以及氮和鋁之間的強鍵結所造成的,為了避免此一現象,本文提出二次成長和鈍化法兩種技術解決,尤其是鈍化法,對於量產具有極大的優點,利用這些方法,成功的解決此一問題,製作出1.262微米的氮砷化銦鎵量子井雷射。zh_TW
dc.description.abstractThe effects of two-step and nitride passivation growth of InGaAsN QW on AlGaAs/GaAs cladding layers have been studied. It is shown that both methods are effective on reducing Al-contamination and improving optical quality of InGaAsN QW. While lasers prepared by both methods exhibit almost the same characteristics, nitride passivation is preferred due to its simple process and short run-time, which are essential for mass production.en_US
DC.subject氮砷化銦鎵zh_TW
DC.subject雷射zh_TW
DC.subjectInGaAsNen_US
DC.subjectLaseren_US
DC.title氮砷化銦鎵雷射二極體成長與研製zh_TW
dc.language.isozh-TWzh-TW
DC.titleGrowth and fabrication of InGaAsN laser diode.en_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明