| dc.description.abstract | Millimeter-wave flip-chip RF front-end transmitter circuits design are the main
research of this thesis, which apply to Ka band local multipoint distribution
service(LMDS). These Ka band circuits are implemented with WIN 0.15μm pHEMT,
including coplanar waveguide power amplifier, broadband power amplifier,
sub-harmonic diode and resistive mixer designs.
The measured results of the circuit are illustrated as follows; for the coplanar
waveguide power amplifier , gain is 14.5 dB, input and output return loss are 8dB and
5.4dB, the output power and power added efficiency at the 1-dB gain compression
point are 20.4dBm and 14.1%, the maximum output power and power added
efficiency are 22.3dBm and 19.3% ; for the broadband power amplifier , bandwidth is
19GHz to 31GHz, gain is 21.6 dB at 27.1GHz, input and output return loss are 10dB
and 4dB, the output power and power added efficiency at the 1-dB gain compression
point are 21dBm and 18.6%, the maximum output power and power added efficiency
are 21.3dBm and 21.9%; for the sub-harmonic diode mixer, operating at up-converter,
the conversion loss is 10.5dB, input power at the 1-dB gain compression point is
-3dBm; operating at down-converter, the conversion loss is 11.1dB, input power at the
1-dB gain compression point is 1dBm; the LO-RF and IF-RF isolation are greater than
19dB and 13dB at up-converter operation, the LO-IF and RF-IF isolation are greater
than 14dB and 38dB at down-converter operation; for the sub-harmonic resistive
mixer, the conversion loss is 10.4 dB, input power at the 1-dB gain compression point
is 1dBm, the LO-RF and IF-RF isolation are greater than 30dB and 16dB | en_US |