| dc.description.abstract | As the wireless multi-media services become more and more popular, therefore broadband wireless access techniques are developed to satisfy these demands. The millimeter wave system takes advantages in the wide frequency range, and matches the trend of high data rate and wide-bandwidth in modern wireless communication system. The millimeter wave system, such as LMDS (Local Multipoint Distribution Service), plays an important role in the wireless-broadband technologies. The receiver circuits include low noise amplifiers, broadband low noise amplifier, and distributed amplifier, which are the key components in LMDS system.
The thesis focuses on the millimeter wave receiver front-end circuit designed, which include the low noise amplifiers in Ka band and V band. The circuits are implemented with WIN 0.15mm pHEMT technology, and then apply the filp-chip package technology to investigate the issues of high frequency interconnects. The integrated millimeter wave front end by flip-chip package will be developed in the next study phase.
The measured and simulated results of the designed circuits are illustrated as followings; for the coplanar waveguide 28GHz LNA, the obtained gain is 28.6 dB, input power at the 1-dB gain compression point is -15 dBm, noise figure is 3.5 dB; for 10-30GHz wideband LNA, the gain is 14.5 dB, output power at the 1-dB gain compression point is 10 dBm, noise figure is 6dB; for the coplanar waveguide distributed amplifier, gain is more than 5 dB within 32GHz bandwidth, output power at the 1-dB gain compression point is more than 5 dBm; for the coplanar waveguide Darlington distributed amplifier, the gain is more than 5 dB in within 35GHz bandwidth, output power at the 1-dB gain impression point is more than 5 dBm. The V-band LNA has 18dB gain and the bandwidth is 10GHz, and noise figure is 4.84 dB. | en_US |