| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 鍾哲仁 | zh_TW |
| DC.creator | Zhe-Ren Zhong | en_US |
| dc.date.accessioned | 2006-7-3T07:39:07Z | |
| dc.date.available | 2006-7-3T07:39:07Z | |
| dc.date.issued | 2006 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=93521083 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 中文摘要
本論文中我們發展了兩種一維AC模擬器，他們都可以從暫態的模擬器裡面開發出來，AC模擬器可以幫助我們獲得半導體元件在頻域之中的各種量測，我們開發出兩種模擬器一種稱為３N交流模擬器，另一種稱為4N交流模擬器，兩種方法都可以用來量測 曲線圖，我們將會比較我們開發出來的兩種模擬器的差異，在最後我們會利用PN二極體以及金氧半電晶體來驗證我們的模擬器，利用這兩種元件去證明我們所開發出來的AC | zh_TW |
| dc.description.abstract | ABSTRACT
In this thesis, we develop two methods for 1D AC device simulation. These methods can be developed by using the transient simulation. The methods for 1D AC device simulation can help user obtain the parameter measurement of the semiconductor device in frequency domain. We develop the 3N and 4N method for 1D AC device simulation. They can measure the curve of the semiconductor device. We will compare the 3N method with the 4N method for 1D AC device simulation. Finally, we apply the 3N method and the 4N method to simulate the PN diode and the MOS system. | en_US |
| DC.subject | AC元件模擬 | zh_TW |
| DC.subject | AC device simulation | en_US |
| DC.title | 一維半導體元件頻域模擬之探討 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | 1D Semiconductor Device Simulation in Frequency Domain | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |