| dc.description.abstract | The purpose of this dissertation is to develop millimeter-wave (MMW) broadband and high gain on-chip antennas, rectifying antenna (rectenna), active-integrated antenna (AIA), and filters in V-band. The antennas and filters are fabricated in standard gallium arsenide (GaAs) and complementary metal-oxide semiconductor (CMOS) technologies and operated for wireless personal area network (WPAN), high-definition multimedia interface (HDMI), and wireless power transmission (WPT) applications. The improved techniques of antenna radiation pattern are demonstrated in this dissertation. The design procedures for these on-chip antennas are verified by practical implementation. The measured results are well agreed with the designs and simulations. Compare with the previous on-chip antennas; the proposed antenna provides endfire radiation patterns with high front-to-back ratio, and demonstrates the better bandwidth and gain performance. The antenna performance is characterized by using S-parameter, two-antenna (identical), three-antenna, and radiation pattern measurement methods for return loss, transmission gain, absolute gain, and radiation patterns. Here, to minimize these uncertainties, a three-antenna measurement technique is employed to obtain the antenna absolute gain of the on-chip antenna. The use of three-antenna method completely eliminates the need of unknown parameter, such as effective aperture, in two-antenna method; therefore, the antenna absolute gain can be accurately measured.
A V-band on-chip dipole-based antenna achieves a compact area of 0.9 mm2, a fractional bandwidth of 24 % (55 to 70 GHz, voltage standing wave ratio (VSWR) = 2), a transmission gain of -32 dB (the separated distance R = 5 cm), an absolute gain of 3.6 dBi, a front-to-back ratio of 12 dB, and an half-power beamwidth of 60° in E-plane and H-plane. A high-efficiency dual-band (35/94 GHz) on-chip rectenna presents a fractional bandwidth of 82 % and 41 % (VSWR=2), an antenna gain of 7.4 dBi and 6.5 dBi at the frequencies of 35 GHz and 94 GHz, respectively. The measured power conversion efficiencies (PCEs) are 53 % and 37 % in free space at 35 GHz and 94 GHz, while the incident radiation power density is 30 mW/cm2. The fabricated rectenna occupies a compact area of 2.9 mm2. An on-chip integrated antenna oscillator transmitter performs a high antenna gain of 7.6 dBi and a low phase noise of -114 dBc/Hz at 10 MHz offset at 9 mW power consumption. The figure of merit (FOM) of the voltage controlled oscillator (VCO) is -181 dBc/Hz at 10 MHz offset. The measured receiver power is -38 dBm at separated distance of 90 cm at 66 GHz. The fabricated oscillator-transmitter occupies a compact area of 0.61 mm2. Furthermore, compact on-chip finite-width ground coplanar waveguide (FGCPW) lowpass filter (LPF) and bandpass filter (BPF) demonstrate insertion losses smaller than 0.5 dB and 1.5 dB with return losses of better than 12 dB and 13 dB, respectively. The 1-dB bandwidths of the lowpass filter and bandpass filter are 70 GHz (0-70 GHz) and 11 GHz (55-66 GHz), respectively. The stopband rejections are better than 20 dB from 95 to 120 GHz in the lowpass filter, and from 0 to 42 GHz and 82 to 120 GHz in the bandpass filter. The chip area is very compact of 0.43 × 0.45 mm2.
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