| dc.description.abstract | During the process of depositing diamond-like carbon films with plasma-enhanced chemical vapor deposition, deposition rate and the quality of the films were effected by some parameters, like gas concentration, temperature, pressure, ion energy and carbon sources. In order to clarify how these parameters influence the deposition rate, in this paper we consulted to the former work and their experimental setup to create a 2-D physical model. And adopting commercial software CFD-ACE+ as a solver. Finally, we discuss the simulation results. In mathematical model, all species were expressed with continuity equations, while electron energy was solved by energy conservation equation. Besides, electric field or electric potential was in the form of Poisson’s equation. And then the mathematical model was solved with finite volume method. We simulate different inlet flow velocity, gas temperature and pressure to see how the variables will change. Methane was supplied with inlet gas flow, though plasma reactions consumed some of them, methane got more than reaction loss. But the situation was quite different for other species, like the main deposition species methyl. For methyl, the reaction production rates were less than the flow rate that out of the chamber. Therefore, the larger inlet flow the greater loss of reaction products. This also decreases the deposition rate. Gas temperature and pressure followed ideal gas law. Under fixed pressure, temperature gets larger while the gas concentration gets fewer. Under fixed temperature, gas concentration is proportional to the pressure. In our simulation results, the highest deposition rate occurred while inlet velocity equals to 0.01 m/s. And the higher inlet velocity get worse deposition rate. Under control of gas temperature and pressure, high pressure and low temperature would increase deposition rate. | en_US |