| dc.description.abstract | In this study, we investigated the influence of Mn2+ doped TiO2 thin films ions under different temperature of annealing treatment on photocurrent. The TiO2 thin films were prepared by sol-gel spin coating. There are several advantages in this method like simplity process, lower cost, better product quality, and more dopant uniform. TiO2 has excellent physical and chemical stability, high specific surface area, high porosity, and high photoelectrochemical and photocatalytic activity. Since the undoped-TiO2 films have high energy gap, they are not useful in the visible range. In order to reduce energy gap, we have doped Mn2+ ions into TiO2 films and to enhance the absorption of the visible light. Furthermore, the sol-gel spin coating method was employed to prepare the MnxTi1-xO2 thin films, where x=0, 0.02, 0.05 0.1. We have also studied the structure, absorption spectra, and photocurrent of the MnxTi1-xO2 films in air atmosphere with different annealing temperature. We found that the TiO2 films have good structure with annealing temperature of 550℃ and the energy gap reduces after doping the Mn2+ ions. As results of TiO2 doped Mn2+ ions, the recombination of electrons and holes will be enhanced. In addition, a bias potential can be applied to accelerate the separation of photogenerate electrons and holes to improve efficiency of photocurrent. The TiO2 films with 10 mol% Mn2+ have a max photocurrent value of 0.68 mA/cm2 when annealing temperature was 550℃and the bias potential was 0.8 V. | en_US |