| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 陳岳毅 | zh_TW |
| DC.creator | Yueh-Yi Chen | en_US |
| dc.date.accessioned | 2007-7-24T07:39:07Z | |
| dc.date.available | 2007-7-24T07:39:07Z | |
| dc.date.issued | 2007 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=945201052 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在本論文裡，我們比較了側向p-n接面與一般垂直p-n接面元件之特性，一般的垂直接面發光二極體，在多重量子井中會有載子分佈不均勻的問題，可藉由側向接面元件消除，側向接面元件展現了穩定且平坦的光譜頻寬，在大偏壓電流操作下，3-dB頻寬為165nm，中心波長在1060nm附近，其3-dB頻寬對擴散深度及加入的偏壓電流不敏感，且頻寬有飽和之現象，此說明載子均勻分佈之重要性。 | zh_TW |
| dc.description.abstract | In this thesis, we compared performance of our demonstrated transverse p-n junction devices to those traditional vertical ones. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by introducing a transverse p-n junction with MQWs combining with different emission wavelengths. These devices exhibit stable, flattened, and invariant broadband optical spectrum with maximum 3-dB bandwidth of 165nm around the wavelength of 1.06μm under a large bias current operation. The bandwidths of devices are not sensitive to diffusion depth and bias currents, revealing the improvement of uniform distribution of carriers. | en_US |
| DC.subject | 側向接面 | zh_TW |
| DC.subject | 超螢光發光二極體 | zh_TW |
| DC.subject | 砷化鎵 | zh_TW |
| DC.subject | superluminescent diode | en_US |
| DC.subject | GaAs | en_US |
| DC.subject | transverse junction | en_US |
| DC.title | 以砷化鎵為基材在1060nm波段側向接面超螢光白光二極體 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | GaAs-based transverse current injection light emitting diodes at the wavelength 1060nm | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |