| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 吳賀傑 | zh_TW |
| DC.creator | Ho-Chieh Wu | en_US |
| dc.date.accessioned | 2007-7-4T07:39:07Z | |
| dc.date.available | 2007-7-4T07:39:07Z | |
| dc.date.issued | 2007 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=945201054 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在這篇論文中，我們使用新變數來處理一維元件之AC模擬，同時，使用兩種方法來執行模擬，其一是經由內部模擬器來進行，另一個是經由外部模擬器，也就是我們實驗室所開發的AC_CKT 電路模擬器來執行。我們會介紹AC_CKT的使用方法並用幾個範例來介紹輸入檔的撰寫格式，然後我們以一個金氧半電晶體來做驗證，在不同頻率下量測其C-V曲線，最後比較兩種方法得到的模擬結果。 | zh_TW |
| dc.description.abstract | In this thesis, we use new variables to process 1-D device ac simulation. We develop two methods for ac simulation. One is through the internal ac solver. The other is through AC_CKT simulator which is developed by our group. We will introduce the AC_CKT simulator and use some examples to show how to write the input file for the AC_CKT simulator. Then, we use an MOS capacitor as an example to measure the C-V curve under different frequencies. Finally, we will compare the simulation results of the two methods. | en_US |
| DC.subject | 交流 | zh_TW |
| DC.subject | ac | en_US |
| DC.title | 用新變數法探討一維半導體元件之交流模擬 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | New Variables for AC Simulation of 1–D Semiconductor Devices | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |