| dc.description.abstract | In recent years, energy problem has been taken seriously day by day. Therefore, the power semiconductor device is showing increasing important in power electronics. To break through the material limits of silicon to realize the drastic performance improvement, GaN have at-tracted much attention. GaN has several special properties: fine thermal stability, high breakdown voltage, high electron velocity, and high current density, and so on. GaN could be applied for high frequency and high voltage operation at high temperature environment, especially such as future automobile application. In my thesis, I would realize GaN HEMT integrated schottky diode and apply it to high frequency and high voltage operation dc to dc converter. I also compare Si power MOSFET and GaAs pHEMT with GaN in applying dc to dc converter and recognize the advantage of GaN for power electronics.
In chap2, I would set up simulation platform with “Aglient Ad-vanced Design System 2005”, and analyze dc to dc converter to check what demands for device. I also establish measurement system for dc to dc converter in this chapter, and use GaAs pHEMT and Si power MOS-FET to compose dc to dc converter. In chap3, I utilize the experience in previous to design GaN power device and schottky diode. Besides, the process fabrication flow is shown in this chapter, too. The dc and rf per-formance are measured in chap4. High frequency (1 MHz) and high voltage (30 V) GaN dc to dc converter is realized and analyzed. Finally, I would drop some conclusions and future work. | en_US |