| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 沈家賢 | zh_TW |
| DC.creator | Jia-sian Shen | en_US |
| dc.date.accessioned | 2008-7-3T07:39:07Z | |
| dc.date.available | 2008-7-3T07:39:07Z | |
| dc.date.issued | 2008 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=945201065 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文是理論探討流經半導體量子點的穿隧電流，我們使用了兩個能階的安德森模型，來模擬這個系統。穿隧電流分別顯示出庫倫階梯與庫倫振盪的關係，相對於源極-汲極電壓與閘極電壓。穿隧電流頻譜的結構很容易被溫度所抑制。對四重簡併態，穿隧電流不會呈現雙穩態電流的現象。 | zh_TW |
| dc.description.abstract | Is this thesis we theoretically study the tunneling current through a semiconductor quantum dot . The Anderson model with two energy levels is used to simulate our studied system . Tunneling current show , respectively , the staircase and oscillatory behaviers with respect to the sourse-drain voltage and the gate voltage . The structure of current spectrum is easily suppressed by temperature . For the four-fold degenerate state , tunneling current did not exhibit bistable current . | en_US |
| DC.subject | 量子點 | zh_TW |
| DC.subject | 格林函數 | zh_TW |
| DC.subject | 單電子電晶體 | zh_TW |
| DC.subject | quantum dots | en_US |
| DC.subject | single-electron transistors | en_US |
| DC.subject | Green's function | en_US |
| DC.title | 半導體量子點之穿隧電流 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Tunneling current through a single semiconductor quantum dot | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |