| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 李宗儒 | zh_TW |
| DC.creator | Zong-ru Li | en_US |
| dc.date.accessioned | 2007-10-12T07:39:07Z | |
| dc.date.available | 2007-10-12T07:39:07Z | |
| dc.date.issued | 2007 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=945201106 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在本論文研究中，我們提出了一個可操作在830nm波段的矽-矽鍺垂直入射的雪崩光二極體。我們的元件可以藉由操作在崩潰區而最小化因N型基板所產生的擴散電流而造成的低頻roll-off的問題，同時也可以藉由衝擊離子的效應而產生高輸出頻寬。所以我們的元件可以在不使用複雜的SOI技術之下，而達到高輸出頻寬(15.3GHz)以及極高的增益頻寬積(428GHz)。 | zh_TW |
| dc.description.abstract | In this thesis, we demonstrate a high-performance Si–SiGe-based vertical-illuminated avalanche photodiode (APD) operating in the 830-nm wavelength regime. Under avalanche operation, the low-frequency roll-off caused by the slow diffusion current from the n+ silicon substrate can also be minimized. Also, our device can achieved high bandwidth due to impact-ionization-induced resonant effect. So, a wide bandwidth (15.3 GHz) and an extremely high gain-bandwidth (428 GHz) can be achieved simultaneously in our device without using complex silicon-on-insulator or germanium-on-insulator substrates. | en_US |
| DC.subject | 累增光二極體 | zh_TW |
| DC.subject | 矽鍺 | zh_TW |
| DC.subject | photodiode | en_US |
| DC.subject | SiGe.avalanche | en_US |
| DC.title | 以矽鍺為材料，用於850nm短距光纖通訊超高增益頻寬積(428GHz)的累增崩潰光二極體 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Using SiGe based avalanche photodiode operating at a wavelength of 850 nm with a gain-bandwidth product of 428 GHz | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |