| dc.description.abstract | Preparation of uniform silica films with high mechanical properties by plasma enhanced chemical vapor deposition (PECVD) at room temperature has been developed. At first, plasma parameters, different position, substrate temperature, and amount of oxygen were investigated using diethoxydimethylsilane (DEODMS) as monomer. In addition, these above films were treated by different plasma to study the influence of surface treatment on chemical structure and properties of films. On the other hand, oxygen plasma was also utilized to etch substrates to make rough surface. Finally, the films were deposited using four different monomers (tetraethoxysilane (TEOS), methyltriethoxysilane (MTEOS), DEODMS, ethoxytrimethylsilane(EOTMS)) with the best plasma parameters found before.
The results showed that the films with hardness 8H were obtained via increasing substrate temperature to 200°C at plasma region, and promote hardness to 9H at 300°C. With adding 20 sccm oxygen into the reactor, the dense and transparent film with 8H hardness was obtained even at room substrate temperature. These above films with further plasma treatment and dipping them into TMCS solution were able to change surface energy of films to have water contact angle from 79° to 7°~100°. On the other hand, water contact angle of films was promoted to 121° via etching plastic substrate by oxygen plasma.
The films deposited using MTEOS and without adding oxygen had the largest hardness 4H among the four monomers. With increasing the amount of oxygen in all four monomers, the hardness of the films was increased, and the water contact angle of films was decreased. | en_US |