博碩士論文 953903006 完整後設資料紀錄

DC 欄位 語言
DC.contributor機械工程學系zh_TW
DC.creator郭俊麟zh_TW
DC.creatorChun-Lin Kuoen_US
dc.date.accessioned2008-7-21T07:39:07Z
dc.date.available2008-7-21T07:39:07Z
dc.date.issued2008
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=953903006
dc.contributor.department機械工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本研究利用化學水浴法(Chemical Bath Deposition; CBD)進行可見光光觸媒薄膜之製備,以ITO(Indium–Tin-Oxide)導電玻璃為基材,利用此種製程於基材表面先形成一層AgInS光觸媒薄膜,再利用氯化銅進行銅金屬摻雜。而本研究著重於提升半導體薄膜的光敏化效果,試著改變反應溶液pH值與反應時間之鍍膜參數,並將試片置於真空管狀爐中以300 oC燒結1小時。材料分析部分以X-ray繞射儀(XRD)判別薄膜的晶型結構,利用掃描式電子顯微鏡(SEM)來觀察薄膜表面形貌與元素之半定量分析;並利用電化學量測儀以三極式之方式量測光電流,探討光觸媒的成分組成對光電流之影響。zh_TW
dc.description.abstractThe visible-active Photocatalyst thin film of AgInS was deposition on ITO glass and doping Cu by CuCl2 solution by chemical bath deposition (CBD). The research conditions was change the ph value and reaction time and anneal time of the reaction solution and elevation photo-active of the photocatalyst. The material structure analysis by XRD and element analysis by scanning electron microscope (SEM) ;The photocurrent measurement by potentiostat and discussion the element compose by photocurrent effect of photocatalyst.en_US
DC.subject薄膜zh_TW
DC.subject光觸媒zh_TW
DC.subject化學水浴法zh_TW
DC.subjectChemical Bath Depositionen_US
DC.subjectPhotocatalysten_US
DC.subjectCBDen_US
DC.subjectThin filmen_US
DC.title利用CBD法製備銅摻雜之硫系列光觸媒材料研究zh_TW
dc.language.isozh-TWzh-TW
DC.titleThe Synthesis of Cu-Doped Photocatalyst Materials by Chemical Bath Depositionen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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