博碩士論文 955201039 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	電機工程學系	zh_TW
DC.creator	林壯聲	zh_TW
DC.creator	Chuang-sheng Lin	en_US
dc.date.accessioned	2008-7-23T07:39:07Z
dc.date.available	2008-7-23T07:39:07Z
dc.date.issued	2008
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=955201039
dc.contributor.department	電機工程學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	在本論文中，我們成功展示出在460nm波段，利用陣列式側向接面的方式來改善大型化後發光二極體的輸出功率以及量子效率。我們將陣列的數目從1x1提升到4x4陣列，在相同操作電流下，輸出功率和傳統垂直接面發光二極體比較確實達到改善。之後，我們進行光強度分佈量測，側向接面發光二極體在光強度分佈上的表現，在相同操作電流下，的確是比垂直接面更能達到電流擴散增加光功率。 從以上量測結果，我們推論側向接面的方式確實可以擁有增強內部量子效率的優點，降低發光二極體大型化後面臨到電流壅塞的問題，雖然側向接面發光二極體驅動電壓相對地增加，但我們可以將元件在之後發展上，盡量減少側向接面之間的距離等。	zh_TW
dc.description.abstract	We demonstrate the array of GaN-based blue-light light-emitting diode (LED), which is composed of GaN-based blue wavelength multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the re-growth of n-type GaN layers on the sidewall of p-type GaN and MQWS. The non-uniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by incorporating a transverse p-n junction with MQWs. In output power measurements, the transverse junction light-emitting diodes show higher output power as compare with the conventional vertical junction light-emitting diodes. Moreover, the transverse junction light-emitting diodes with more elements small light-emitting diodes have better current spreading and reduce current crowding effect.	en_US
DC.subject	氮化鎵	zh_TW
DC.subject	側向接面	zh_TW
DC.subject	發光二極體	zh_TW
DC.subject	light emitting diode	en_US
DC.subject	transverse junction	en_US
DC.subject	GaN	en_US
DC.title	陣列式側向接面藍光氮化鎵發光二極體	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Array of GaN Based Transverse-Junction Blue Light Emitting Diodes	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US