博碩士論文 962201029 完整後設資料紀錄

DC 欄位 語言
DC.contributor數學系zh_TW
DC.creator湯惟策zh_TW
DC.creatorWei-tse Tanen_US
dc.date.accessioned2009-7-23T07:39:07Z
dc.date.available2009-7-23T07:39:07Z
dc.date.issued2009
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=962201029
dc.contributor.department數學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract本篇論文針對半導體儀器作數值模擬,運用 inexact Newton’’s method 對 drift-diffusion model 求解。考慮原型的 drift-diffusion model 包含:電子電壓,電子濃度,電洞濃度等三個未知變數。數值實驗使用 drift-diffusion model 模擬一個一維的二極體幾何模型。我們討論兩個不同的 non-dimensionalization approach 對 Newton’’s method 的影響並分析 GMRES method 使用不同的 preconditioner 在 Newton’’s method 的結果。實驗結果顯示使用不同的 non-dimensionalization approach 將影響 Newton’’s method 的收斂情形。在實驗中我們使用 US non-dimensional approach (Uniform Scaling non-dimensional approach) 有效的提供 Newton’’s method 一個良好的環境。根據實驗結果發現增加 block Jacobi preconditioner 中 block 的數量幾乎不影響 Newton’’s method 的迭代次數,更甚者即便是增加網格點的數目 Newton’’s method 的迭代次數依然不受影響。 zh_TW
dc.description.abstractThe aim of this thesis to employ an inexact Newton’’s method to solve discrete drift-diffusion model in semiconductor device simulations, where the drift-diffusion model in the primitive form consists of the electrostatic potential , the electron concentrations and the hole concentrations. Consider a 1D diode simulations modeled by drift-diffusion as a test case. We discuss the effect on Newton’’s method by two non-dimensionalization approaches and the application of GMRES method without/ with diagonal and block Jacobi. It is true that the non-dimensional approach will affect the converge of Newton’’s method. In our case, we choose US non-dimensional approach (Uniform Scaling non-dimensional approach) and it will make a great environment for Newton’’s method. From numerical experiment, we find that increasing number of blocks for a block Jacobi preconditioner almost doesn’’t affect the number of Newton’’s iterations and decreasing grid size for a block Jacobi preconditioner also doesn’’t affect the Newton’’s iterations neither. en_US
DC.subjectsemiconductorzh_TW
DC.subjectGMRESzh_TW
DC.subjectfinite differencezh_TW
DC.subjectdrift-diffusionzh_TW
DC.subjectNewton's methodzh_TW
DC.subjectdrift-diffusionen_US
DC.subjectNewton's methoden_US
DC.subjectfinite differenceen_US
DC.subjectGMRESen_US
DC.subjectsemiconductoren_US
DC.titleAn Inexact Newton Method for Drift-DiffusionModel in Semiconductor Device Simulationsen_US
dc.language.isoen_USen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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