| dc.description.abstract | In recently, for the energy crisis problem and environmental protection topic, solar cells become one of the substitutability energies. Among the well-known solar cell techniques, silicon thin-film solar cell is considered as an important developing field. The active layer of amorphous silicon thin-film solar cell, i.e. intrinsic layer, plays a crucial role in photoelectric conversion efficiency.
To fabricate amorphous silicon thin films, magnetron sputtering method is a cleaner process than CVD. However, the characteristic of the films are poor using magnetron sputtering method. In this study the research point is how to improve the characteristics of hydrogenated amorphous silicon thin films using magnetron sputtering system.
In this study, we have applied magnetron sputtering method with DC bias to anode terminal to deposit hydrogenated amorphous silicon thin films. By this way, the microstructure parameter has been improved, the hydrogen content reduced, and the photo-conductivity properties increased significantly in hydrogenated amorphous silicon thin films.
The research results show when the DC bias is applied to anode terminal with bias range from +10 V to + 30 V and hydrogen flux 3 sccm, we can obtain good photoelectric characteristics of the hydrogenated amorphous silicon thin films as follows: optical energy: about 1.7 eV; microstructure parameter: 0.08 ~ 0.30; hydrogen content: 15.7 at% ~ 16.4 at%; dark-conductivity: 2.5 × 10-11 Ω-1cm-1 below; photo-conductivity: 1.8 × 10-6 Ω-1cm-1 ~ 5.7 × 10-6 Ω-1cm-1.
According to the results, it is possible to fabricate a good photoelectric conversion efficiency of hydrogenated amorphous silicon solar cell based on the hydrogenated amorphous silicon thin film made using magnetron sputtering method with positive DC bias to anode terminal.
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