| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 李芳存 | zh_TW |
| DC.creator | fang tsun li | en_US |
| dc.date.accessioned | 2009-7-17T07:39:07Z | |
| dc.date.available | 2009-7-17T07:39:07Z | |
| dc.date.issued | 2009 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=965201066 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文主要研究內容為成長Al/AZO/ZnO/In2Se3/Cu2Se/CIGS/Mo/SLG結構之薄膜太陽能電池(CIGS solar cell)，Al上電極使用電子槍蒸濺鍍系統成長，其餘各層薄膜皆以濺鍍方式成長，並針對元件進行直流量測、分析與討論。目前已做出具有轉換效率之硒化銅銦鎵薄膜太陽能電池，並在AM1.5之標準光源下，量測元件開路電壓Voc = 126 mV，短路電流密度Jsc = 1.366 mA/cm2，填充因子F.F = 39.46 %，而轉換效率則為0.068 %，接面理想因子η為3.63。由元件順向偏壓分析，推論空乏區內主要由複合電流所主導，所以需改善元件的接面問題以及CIGS薄膜品質，以增進元件效率。
| zh_TW |
| dc.description.abstract | This project focuses on fabrication of Al/AZO/ZnO/In2Se3/Cu2Se/CIGS/Mo/ SLG thin film solar cell (CIGS solar cell). The metal grid Al was fabricated by E-Gun evaporator and other films were deposited by sputtering. Detailed film analysis and discussion were carried out after film deposition immediately for the CIGS solar cell performance. The analysis includes X-ray, UV-NIR, Hall-measurement, EDS, SEM, 4-points resistance measurement.
The fabricated CIGS thin film solar cell demonstrated preliminary results. By AM1.5 measurement, the measured open-circuit voltage (Voc) is 126 mV, the short-circuit current density (Jsc) is 1.366 mA/cm2, Fill Factor (FF) is 39.46 %, and the conversion efficiency is 0.068 %. The junction ideality factor in the forward diode measurement is about 3.63, which shows the major recombination current in the device with high turn-on resistance. To further improve the quality of absorber layer CIGS and the junctions would be able to obtain improved cell efficiency.
| en_US |
| DC.subject | 硒化銅 | zh_TW |
| DC.subject | 硒化銅銦鎵 | zh_TW |
| DC.subject | 硒化銦 | zh_TW |
| DC.subject | Cu(In | en_US |
| DC.subject | Ga)Se2 | en_US |
| DC.subject | In2Se3 | en_US |
| DC.subject | Cu2Se | en_US |
| DC.title | 以硒化銦和,作為緩衝層之硒化銅銦鎵薄膜太陽能電池 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | CIGS thin film solar cell with In2Se3 and Cu2Se buffer layers | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |