| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 吳喬蓁 | zh_TW |
| DC.creator | Ciao-Jhen Wu | en_US |
| dc.date.accessioned | 2009-7-15T07:39:07Z | |
| dc.date.available | 2009-7-15T07:39:07Z | |
| dc.date.issued | 2009 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=965201070 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本論文針對1.55μm波長的光纖通訊系統中接收端前級元件光二極體之製作與研究，在元件幾何結構上摻入一層P型的電場承受層，因此可讓內部的電子速度維持在over shoot velocity，克服P-I-N 光偵測器與傳統單載子傳輸光偵測器的缺點，進而達到高速、高響應度、高頻寬的表現。並且利用覆晶結合技術與附有金柱基的氮化鋁基板結合，讓主動區面積28?m2的元件能夠承受更高的飽和電流(13.6mA)，而主動區面積144?m2預估擁有創新紀錄的飽和電流-頻寬之乘積(6660mA-GHz, 37mA, 180GHz)。
| zh_TW |
| dc.description.abstract | In this study, we demonstrate near-ballistic uni-traveling carrier photodiodes (NBUTC-PDs) with an optimized flip-chip bonding structure, wide 3-dB optical-to-electrical (O-E) bandwidth (>110GHz), and extremely high saturation current-bandwidth product performance (37mA, >110GHz, >4070mA-GHz). NBUTC-PDs with different active areas (28 to 144?m2) are fabricated and flip-chip bonded with co-planar waveguides (CPWs) onto an AlN based pedestal. This improves the high-power performance without seriously sacrificing the speed performance. In addition, the saturation-current measurement results indicate that after inserting a center bonding pad on the pedestal (located below the p-metal of the NBUTC-PD for good heat-sinking), the saturation current performance of the device becomes much higher than that of the control device (without the center bonding pad), especially for the device with a small active area (28?m2). The measurement and modeling results indicate that a device with a 144?m2 active area and optimized flip-chip bonding pedestal can achieve an extremely high saturation current-bandwidth product (6660mA-GHz, 37mA, 180GHz).
| en_US |
| DC.subject | 光偵測器 | zh_TW |
| DC.subject | 覆晶結合 | zh_TW |
| DC.subject | photodiode | en_US |
| DC.subject | flip chip bonding | en_US |
| DC.title | 應用在> W頻段（>110GHz）覆晶式具超高飽和電流-頻寬乘積的近彈道傳輸光偵測器 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Extremely High Saturation Current-Bandwidth Product Performance of a Near-Ballistic Uni-Traveling-Carrier Photodiode with a Flip-Chip Bonding Structure | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |