| DC 欄位 |
值 |
語言 |
| DC.contributor | 電機工程學系 | zh_TW |
| DC.creator | 蔡志維 | zh_TW |
| DC.creator | Tsai-Chih Wei | en_US |
| dc.date.accessioned | 2009-6-25T07:39:07Z | |
| dc.date.available | 2009-6-25T07:39:07Z | |
| dc.date.issued | 2009 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=965201071 | |
| dc.contributor.department | 電機工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在這篇論文中，我們使用Poisson’s equation以及continuity equations設計出包含表面復合模型的二維混階元件模擬器。藉由這模擬器，可探討元件內部載子復合的情形，以及相伴隨的載子運動效應，接著我們將此種方法建立到一般的元件上，來探討表面復合效應對於元件的影響，並且為了證明電流的影響如同我們所假設，我們也另外建立一個電流極座標表示法，最後我們將討論的一個主題是以non-Bernoulli的電流表示方法，即回歸最原始的漂移電流以及擴散電流，並比較Bernoulli與non-Bernoulli的優缺點。
| zh_TW |
| dc.description.abstract | In this paper, we use Poisson’s equation and continuity equations to design the surface recombination model for 2-D device simulator. Because this simulator is designed to include the surface carrier recombination, we develop this surface recombination model for p-n diode and BJT device. For proving the influence of surface recombination current, we also build a vector plot to describe the current flow. Finally the other subject to be discussed is the non-Bernoulli equation for current expression. The non-Bernoulli equation returns to the most primitive expression for drift current and diffusion current. We will compare the Bernoulli method and non-Bernoulli method.
| en_US |
| DC.subject | 非白努力方程式 | zh_TW |
| DC.subject | 表面復合效應 | zh_TW |
| DC.subject | 白努力 | zh_TW |
| DC.subject | Bernoulli function | en_US |
| DC.subject | surface recombination | en_US |
| DC.title | 表面復合電流及非白努力方程式對於二維半導體數值分析之影響 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Surface Recombination Current and non-Bernoulli Equation for 2-D Semiconductor Device Simulation | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |