| DC 欄位 |
值 |
語言 |
| DC.contributor | 機械工程學系 | zh_TW |
| DC.creator | 郝峻 | zh_TW |
| DC.creator | Chun Hao | en_US |
| dc.date.accessioned | 2010-7-26T07:39:07Z | |
| dc.date.available | 2010-7-26T07:39:07Z | |
| dc.date.issued | 2010 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=973203008 | |
| dc.contributor.department | 機械工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本實驗目的為碳奈米管微電極陣列之製作，結合半導體製程中的各項製程：包括了薄膜沉積、微影蝕刻等以製做碳奈米管元件，並研究所製做完成的微電極陣列之特性(電化學特性之分析與細胞觀測之應用)。
首先評估雙金屬催化劑與浸漬法(dip-coating method)對於碳管電極陣列製做之可行性，透過控制不同的催化劑與催化劑比例，選擇一組對於製做電極陣列最佳的催化劑與比例條件，以此條件在不同的薄膜上使用熱化學氣相沉積來對碳管元件製做之選擇性與可行性做評估。
從浸漬法的實驗中，我們可以發現到，使用鈷金屬催化劑成長碳奈米管的效果較鎳金屬為好，碳奈米管的分布與管徑大小都較均勻；然而不管是在介電質薄膜或是導體薄膜上，薄膜的粗糙度、親疏水性與晶向組成都不會是影響浸漬法效果的主要因素，厚度與薄膜的其他特性可能是更為關鍵的因素；不同的表面處理方法於薄膜的表面改質效果，對於浸漬法成長碳奈米管的應用上目前則沒有一個顯著的效果。
由此我們改為探討薄膜催化劑與製程條件對製做碳奈米管元件的之效果，透過蝕刻法與光阻去除法來定義出碳奈米管元件的圖案，討論製程對微電極陣列晶片之影響，並對製程氣體、壓力與成長溫度對碳奈米管微電極陣列元件的製備做一系列的探討：
而我們可以發現在使用NH3做為還原氣體時，製程溫度對於碳奈米管的形貌並沒有太大的影響；另外隨著成長時間的增加，碳奈米管的密度也相對增加，催化劑在製程中的毒化並沒有造成太大影響。因此我們可以使用一個較為低溫的成長情況與成長時間來控制碳奈米管的表面形貌，由此進一步的比較碳奈米管電極陣列的元件特性。
| zh_TW |
| dc.description.abstract | Our experiment is to fabricate CNT-MEA system with combining novel integrated circuit technology including film deposition, lithography and etching process and to study the characteristics (impedance and cell observation) of the as fabricated CNT-MEA.
We assess the feasibility of using bimetallic catalysts and dip-coating method to fabricate CNT-MEA. With different metal catalysts and controlling the ratio of catalysts, we are able to find an optimum condition for growing CNT on different substrates. And cobalt shows better catalytic ability on growing CNT (the density and uniformity of CNT) than nickel in dip-coating method. And the governing factor for applying dip-coating to grow CNT might be the thickness or other specific characteristics of the supporting layer rather than the roughness, hydrophility and crystal structure of the supporting layer. No efficient surface treatment was found for applying dip-coating method to fabricate CNT-MEA.
Thus we try to study the effect of thin film catalyst and CVD process conditions (gas flow, pressure and growth temperature) on fabricating CNT-MEA. With different methods (etching and lift off) to define the pattern of MEA, we are able to discuss and to solve the encountering problems during CNT growth process.
When using NH3 gas as the reduction gas, growth temperature does not show significant effect on the CNT property and morphology. And with increasing the growth temperature, the density of CNT increases simultaneously disregards the poison effect of catalyst during growth process.
We’re now able to grow CNT at lower temperature and to control the morphology with growth time, thus we can study the characteristic of the as fabricated CNT-MEA device.
| en_US |
| DC.subject | 碳奈米管 | zh_TW |
| DC.subject | 浸漬法 | zh_TW |
| DC.subject | 微電極陣列 | zh_TW |
| DC.subject | 熱化學氣相沉積 | zh_TW |
| DC.subject | MEA | en_US |
| DC.subject | CNT | en_US |
| DC.subject | thermal CVD | en_US |
| DC.subject | dip-coating method | en_US |
| DC.title | 碳奈米管微電極陣列之製造與性質檢測 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Fabrication and characterization of carbon nanotube microelectrode array system | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |