| DC 欄位 |
值 |
語言 |
| DC.contributor | 材料科學與工程研究所 | zh_TW |
| DC.creator | 董彥廷 | zh_TW |
| DC.creator | Yen-ting Tung | en_US |
| dc.date.accessioned | 2010-8-26T07:39:07Z | |
| dc.date.available | 2010-8-26T07:39:07Z | |
| dc.date.issued | 2010 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=973209013 | |
| dc.contributor.department | 材料科學與工程研究所 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 本研究利用溶膠凝膠技術搭配旋轉塗佈法製備氧化鋁鋅（ZnO:Al）透明半導體薄膜，其實驗之進行大致可分為兩個部份，第一部分為溶劑的取代，文獻中常見的溶劑為乙二醇甲醚，但卻是環保署管制之二級毒化物，因此本研究擬以實驗室常見之乙醇作為溶劑，希望能在不影響其光、電性質之情況下取代以二醇甲醚。將乙二醇甲醚及乙醇兩種溶劑之前驅物溶膠，分別旋塗於基板上並於氧氣氛下施以600℃之退火處理，實驗中證實兩種溶劑系統所生成之薄膜，皆隨著鋁摻雜濃度的增加，其X光繞射分析可得知薄膜結晶性變差且晶粒尺寸縮小，並於紫外光-可見光光譜可發現光學吸收限有藍位移之趨勢（Burstein-Moss效應）。乙醇系統薄膜最低的片電阻為0.2MΩ/□（1% Al），在波長範圍為400-800 nm之平均光穿透率約84%（± 3%），而乙二醇甲醚系統則為0.83MΩ/□（2% Al），89%（± 3%）。
本研究之第二部份為將乙醇系統之溶膠（1% Al）分別塗佈於矽基奈米柱陣列以及矽基蜂窩狀奈米孔洞陣列上，並於氧氣氛下施以600℃之退火處理，雖然由TEM橫截面影像之觀察，薄膜皆並未能完整地填入結構內，但於光反射率之量測可得知薄膜在結構化矽基材上確實能有效地降低光反射，且在矽基奈米柱結構陣列上之ZnO:Al（1% Al）薄膜其光激發螢光強度將隨著結構的蝕刻秒數增加而上升。
| zh_TW |
| dc.description.abstract | In this investigation, we synthesized the ZnO:Al transparent semiconductor thin film by accompanying spin-coating with sol-gel method. There are two parts in the experiments and the first one is substitution of the solvent. In references, the 2-methoxyethanol was usually used as the solvent but it is prohibited due to its toxicity. Therefore, we try to replace 2-methoxyethanol by ethanol and still keep the optical and electrical properties similarly. The sol of precursors of 2-methoxyethanol and ethanol were coated on substrates respectively and then annealed in oxygen atmosphere at 600℃. The results of XRD analysis indicated that the crystalline quality declined and the grain size decreased since the doped concentration of Al increased. Furthermore, the optical absorption edge showed blue-shift ( Burstein-Mossin effect) in the UV-visible spectra. The sheet resistance of the thin film which was synthesized by ethanol is 0.2MΩ/□（1% Al）and its average optical transmittance is 84% (± 3%) in the range of 400-800nm wavelength, on the other hand, the other’s are 0.83MΩ/□（2% Al）and 89% (± 3%) respectively.
The second part of the experiments was to coat the sol of precursor of ethanol on a nanorod arrays silicon substrate and a honeycomb-shaped nanohole arrays silicon substrate. Next, an annealing process was implemented in oxygen atmosphere at 600℃. Although the nanostructures could not be filled with the thin films according to the observation of cross-section TEM images. But we confirmed that the thin films on the nanostructured substrates could efficiently reduce the optical reflectance by measurements. Moreover, we discovered that the photoluminescence intensities of ZnO:Al (1% Al) thin film on the nanorod arrays silicon substrate increased with the etching time.
| en_US |
| DC.subject | 氧化鋁鋅 | zh_TW |
| DC.subject | 溶膠凝膠法 | zh_TW |
| DC.subject | Al-doped ZnO | en_US |
| DC.subject | Sol-gel | en_US |
| DC.title | 奈米結構化氧化鋁鋅薄膜之製作與光電性質研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Study on Fabrication of Nanostructured Al-doped ZnO Films and Their Opto-electrical Properties | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |