| dc.description.abstract | Non-volatile memory (NVM) plays a vital role in modern society, and it is essential in almost every consumer electronic products. The most prevalent NVM used nowadays is flash memory. However, with the scaling down of semiconductor device, tunneling oxide thickness is also going down, which leads to a severe leakage of storage charge, and unable to satisfy the memory requirement. Resistive random access memory (RRAM) is considered one of the most promising one to become next-generation NVM device due to its simple structure, fast program/erase speed, and low power consumption.
Owing to its metal/insulator/metal structure, RRAM is suitable to be fabricated by utilizing modern integrated-circuit back-end-of–line technology, and buried into via. In this thesis, the RRAM was fabricated by using Aluminum, which is a common interconnect material in back-end process , as its top and bottom electrode, and Al2O3, which is a high-K material in semiconductor technology, as its insulator layer, Its memory capability, characteristics and scaling potential are investigated in this study, and the experiment result shows that the non-volatile memory characteristic was obtained under unipolar operation with good high/low resistance ratio and scaling potential. Since its fabrication process is fully compatible with modern VLSI technology, Al/Al2O3/Al RRAM device may have the possibility to be commercialized in the near future.
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