| dc.description.abstract | The article uses photoluminescence imaging technology to measure excess
carrier lifetime, diffusion length and specific series resistance. Crystalline silicon
solar cells has different photoluminescence, photovoltage and photocurrent
because of different illumination result in the short-circuit state, we can use PL
module in the short-circuit to calculate excess carrier lifetime imaging,
photovoltage imaging and photocurrent imaging. The relationship between
excess carrier lifetime and diffusion length, so we can obtain diffusion length
imaging by excess carrier lifetime imaging. Finally, excess carrier lifetime can
calculate the j-v curve, so we can obtain specific series resistance by the slope of
j-v curve. Excess carrier lifetime imaging average is about 2.56*10^-5 sec ,
percentage error average is about 0.69 %, specific series resistance imaging
average is about1.42 Ω*cm^2 , percentage error average is about0.35 %. In order
to verify the correctness of this measurement method, we choose two
illumination intensity at 0.82 W/cm^2 and 0.67 W/cm^2 , and then we obtain
two excess carrier lifetime imaging and two specific series resistance imaging.
We divide a excess carrier lifetime imaging by another excess carrier lifetime
imaging, and specific series resistance imaging is the same. Average value of the
results are about 1.05±0.14 and 1.02±0.07, we can know that each pixel is
independent of illumination intensity by standard deviations, so we verify the
correctness of this measurement method. On the illumination intensity is
0.82 W/cm^2 ,we use excess carrier lifetime imaging to calculate diffusion
length imaging, the diffusion length imaging is divided into electron and hole
iii
diffusion length imaging of the n-type semiconductor, electron and hole
diffusion length imaging of the p-type semiconductor, average value of the
results are 66 μm,92 μm,289 μm,165 μm.
| en_US |