| dc.description.abstract | With the development of semiconductor industry, the semiconductor devices are getting smaller, those results in semiconductor fabrication has to precision. In the semiconductor fabrication, devices are manufactured by different fabrication techniques, such as deposition, etching etc. With the devices are getting smaller, want to produce high aspect ratio holes must by enhanced plasma fabrication. In etching process, result in the effects of etching quality by internal reasons (plasma environment or temperature of chamber walls), therefore, in order to achieve optimal fabrication have to adjusted those effect reasons.
This article analyze deep reactive ion etcher (DRIE) used by currently industry, and it is carrying inductively coupled plasma source. In DRIE fabrication, with additional intermittent polymer deposition process, it is able to produce high aspect ratio holes, but polymer film is deposited on the chamber walls, those results in the difficulty in equipment maintenance. The situation can be alleviated in an elevated wall temperature, so this article presents the results on distribution of particles and temperature in plasma, and combine with chamber thermal analysis, investigate affected by different types of heaters under the chamber for temperature distribution. In the plasma simulation, we use the fluid model method to simulate physical phenomena in plasma. To make the plasma simulations more close to the reality, we also consider the effects of heat transfer and flow field. In chamber thermal analysis, it is combined with plasma simulation results, and investigated temperature distribution of chamber walls and shields in chamber. In the result of this article, we find out that affect the existence of argon plasma distribution and temperature by pressure and coil current. Besides, argon excitation state has effect about argon plasma with pressure and coil current raised. With pressure raised, the argon excitation state ionize ratio also raised, and result in electron temperature decreased. When wafer holder has self-bias, it is obviously affects plasma density and gas temperature.
In the result of chamber thermal analysis, we found out that circular heater has better heating effect and better temperature uniformity than cylindrical heater. By measured results, this article shows reliability for the simulation results.
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