| DC 欄位 |
值 |
語言 |
| DC.contributor | 化學工程與材料工程學系 | zh_TW |
| DC.creator | 葉昭男 | zh_TW |
| DC.creator | Chao-Nan Yeh | en_US |
| dc.date.accessioned | 2011-8-16T07:39:07Z | |
| dc.date.available | 2011-8-16T07:39:07Z | |
| dc.date.issued | 2011 | |
| dc.identifier.uri | http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=983204061 | |
| dc.contributor.department | 化學工程與材料工程學系 | zh_TW |
| DC.description | 國立中央大學 | zh_TW |
| DC.description | National Central University | en_US |
| dc.description.abstract | 在MEMS元件重視內部腔體氣密性能力的同時，鋁鍺薄膜不失為一種良好的氣密性共晶接合材料，除了可在較低溫下進行接合的優點外，且金屬與半導體接合後形成緻密結構亦是重要因素，因此本研究主要探討Al-Ge薄膜在退火後薄膜表面形貌的觀察與Al-Ge擴散行為之動力學機制。本實驗選用磁控式濺鍍機(Magnetron Sputtering)為鍍膜設備，在壓力約10^-5 Torr下製備a-Ge(100 nm)/Al (100 nm)/Si substrate的雙層膜結構。將試片在真空下封入玻璃管中後分別放入200°C、300°C和400°C之高溫爐管中，退火時間從一天、五天、十天、十五天到二十天，另外製作室溫下的三種試片：剛鍍好的試片、放置十六天以及放置七十天之試片，用以比較室溫下不同時間對Al-Ge薄膜交互擴散之影響。試片分析儀器為掃描式電子顯微鏡(SEM)、能量散佈分析儀(EDS)、X射線光電子能譜儀(XPS)、低掠角X射線繞射儀(GIXRD)。
從XPS以及SEM觀察室溫下時間因素並不會影響薄膜之交互擴散行為；200°C下退火薄膜表面開始出現富鋁區析出物，表示Al-Ge之間進行交互擴散現象；300°C下退火十天薄膜發生層交換 (Layer exchange) 現象，依實驗觀察以及文獻理論探討Al-Ge薄膜層交換之動力學機制，並推測Al原子擴散至Ge表面的主要路徑為Ge的晶界。400°C下退火試片表面出現巨大突起物，應為薄膜升溫過程中承受來自基板壓應力，為釋放應力而向外擠出突起物。
| zh_TW |
| dc.description.abstract | Eutectic alunimun/amorphous-germanium (Al/a-Ge) bilayer thin film is characterized by its remarkable hermetic sealing in wafer-level bonding in microelectromechanical system (MEMS) devices. This study investigates metal-induced crystallization (MIC) of the amorphous Ge and the layer exchange of Al and Ge. The a-Ge(100 nm)/Al(100 nm) bilayer thin films were deposited by sputtering technique and separately sealed in glass tubes in a vacuum of 10^-3 Torr. The samples were analyzed mainly by scanning electron microscopy (SEM), energy dispersive Spectrometer (EDS) analysis, and x-ray photoelectron spectroscopy (XPS). From the results we found that the diffusion behavior was impervious to the time evolution at room temperature. a-Ge began induced crystallization by Al when annealing at 200°C. Layer exchange of Al and Ge occurred at 300°C of annealing for 10 days. A kinetic mechanism is developed to explain the layer exchange phenomenon of Al and Ge system. Extrusions were found on the surfaces of the samples annealed at 400°C due to stress relaxation.
| en_US |
| DC.subject | 氣密性封裝 | zh_TW |
| DC.subject | 微機電封裝 | zh_TW |
| DC.subject | 層交換 | zh_TW |
| DC.subject | 金屬誘發結晶 | zh_TW |
| DC.subject | 共晶接合 | zh_TW |
| DC.subject | MEMS packaging | en_US |
| DC.subject | layer exchange | en_US |
| DC.subject | hermetic sealing | en_US |
| DC.subject | metal-induced-crystallization | en_US |
| DC.subject | eutectic bonding | en_US |
| DC.title | 鋁鍺雙層薄膜之擴散行為與金屬誘發結晶現象研究 | zh_TW |
| dc.language.iso | zh-TW | zh-TW |
| DC.title | Elucidating the Metal-induced Crystallization and Diffusion Behavior of Al/a-Ge Bilayer Thin Film | en_US |
| DC.type | 博碩士論文 | zh_TW |
| DC.type | thesis | en_US |
| DC.publisher | National Central University | en_US |