| dc.description.abstract | In this thesis, CIS thin films were prepared by selenization method. The research used three different element ratio of Cu-In alloy target for deposition of copper-indium metal precursor, they were 9:11 at%,1:1 at%, 11:9 at% and the corresponding precursor films with Cu/In ratios of 0.77, 0.88, 1.27, respectively. The Se layer was evaporated on top of the precursor films and the CIS thin films were accomplished by using two-stage RTP process.
This research investigated the characteristics of different atomic ratio of copper-indium metal precursor films and CIS solar cells. It was found that only Cu/In ratio 0.88 of precursor film was suitable to fabricate the CIS thin film and solar cell, this result was affected by crystal phase and Cu/In ratios of the precursor films.
And this thesis used the soda-lime glass(SLG) substrates to manufacture SLG/Mo/p-CIS/CdS/ZnO/AZO thin film solar cell. The performance was measured before and after sequence of post-annealing treatment in the atmospheric environment. In this thesis, conditions of first post-annealing treatment on CIS cell was 150oC with 30min holding time, then second post-annealing treatment was 200oC with 30min holding time.The I-V curve results show that post-annealing treatment could significantly improve the short-circuit current, fill factor and conversion efficiency (form 0.35% to 0.85%) at temperature of 150oC for 30min, but the open-circuit voltage short-circuit current, fill factor and efficiency (form 0.85% to 0.26%) at temperature of 200oC for 30min.
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