博碩士論文 983208006 完整後設資料紀錄

DC 欄位 語言
DC.contributor能源工程研究所zh_TW
DC.creator陳玄宗zh_TW
DC.creatorXuan-Zong Chenen_US
dc.date.accessioned2011-9-26T07:39:07Z
dc.date.available2011-9-26T07:39:07Z
dc.date.issued2011
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=983208006
dc.contributor.department能源工程研究所zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract此研究利用簡單的方法在固定的深寬比中改進填洞效果,不但成本低廉而且有效改善階梯覆蓋率和增加沉積速率,在未來可應用於3DIC或是半導體產業上效果顯著。 利用有限體積法模擬PVD磁場的磁場分布,採用長距離沉積法加入固定高度的連接器和側邊磁鐵,在加入側邊磁鐵可以增加電子行走距離,有效增加與離子間碰撞機會,側邊磁鐵由三個一組共44組,磁鐵強度約為5500高斯,對於長距離的沉積製程中 ,填洞的腔體增加高度120mm,腔體旁邊圍繞著44組磁鐵。 側邊磁鐵極性跟上方磁鐵中最外圈磁鐵同向,以達到將磁力線拘束在腔體中心的效果。經由此設計,可以明顯改善階梯覆蓋率45%以及增加40%的沉積速率,此研究可應用於3DIC。 zh_TW
dc.description.abstractThis study used Finite Volume Method to simulate the magnetic profile of PVD (physical vapor deposition) chamber.. From this study, it can be applied to different kinds of target designs. The side magnets consist of a total of 44 sets for one supporter around the chamber adaptor. Each set has three magnets. Each magnet with the magnetic field strength is 5,500 Gauss. For this long throw PVD, adaptor of gap filling chamber has 120 mm height and the 44 sets of magnets are around to adaptor. The polarity of side magnets is the same as the top magnets of the chamber. These magnets can provide very effective and beneficial to the increase of electron mobility and collision frequency with ions. It shows a significant improvement of step coverage on both side walls up to 45%. The deposition rate increases 40%. This study uses a simple method to apply to 3DIC gap filling capability for an increase of aspect (AR). The improvement from this long throw sputtering PVD with side magnets design around the adaptor can provide not only for low cost target design but also provide a very effective gap filling capability with higher deposition rate for 3DIC application en_US
DC.subject物理氣相沉積zh_TW
DC.subject深寬比zh_TW
DC.subject三維晶片zh_TW
DC.subject磁場zh_TW
DC.subject沉積速率zh_TW
DC.subjectdeposition rateen_US
DC.subjectmagnetic fielden_US
DC.subjectaspect ratioen_US
DC.subject3DICen_US
DC.subjectPVDen_US
DC.title以磁場模擬法設計磁鐵排列改善濺鍍機台之填洞能力zh_TW
dc.language.isozh-TWzh-TW
DC.titleGap filling capability improvement via magnetic field simulation assisted on long throw sputtering PVD of magnet designs and arrangementsen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明