博碩士論文 985201060 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	電機工程學系	zh_TW
DC.creator	蘇柏寬	zh_TW
DC.creator	Bo-kuan Su	en_US
dc.date.accessioned	2011-7-6T07:39:07Z
dc.date.available	2011-7-6T07:39:07Z
dc.date.issued	2011
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=985201060
dc.contributor.department	電機工程學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	本篇論文中，我們藉由二維元件模擬器探討三閘極金氧半場效電晶的元件特性，並探討因元件結構所產生的轉角效應，由於元件的電流大小與元件的通道寬度成正比，我們在元件通道的側壁上加上另外兩面閘極，以達到不降低電路密度而增加元件通道的有效寬度，提高元件的電流驅動力。從模擬結果中，三閘極結構比單閘極結構有著更好的電流驅動力。最後，我們將元件結構顯示器與載子濃度顯示器整合於二維元件模擬器當中，讓使用者可以更快速檢驗元件結構的正確性與快速觀察元件整體的載子分部情形。	zh_TW
dc.description.abstract	In this thesis, we design a 2-D device simulator to simulate the triple-gate MOSFET device characteristic. Then discuss the corner effect of triple-gate structure. The triple-gate MOSFET has three surfaces of gate structures which can increase the effective channel width of the device to enhance the current drivability of the device without reducing the packing density of the circuit. According to the simulation results of the 2-D device, the saturation drain current of the triple-gate MOSFET are much better than the single-gate MOSFET. Finally, in order to quickly verify the device structure and simulation results, we design a 2-D structure and concentration indicator. The structure and concentration indicator can be used to quickly check the 2-D simulation results of the device structures and concentration result.	en_US
DC.subject	轉角效應	zh_TW
DC.subject	三閘極	zh_TW
DC.subject	元件模擬	zh_TW
DC.subject	臨限電壓	zh_TW
DC.subject	Threshold voltage	en_US
DC.subject	simulation	en_US
DC.subject	Corner Effect	en_US
DC.subject	Triple-gate	en_US
DC.title	三閘極金氧半場效電晶體之轉角效應探討	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Corner Effect in Triple-Gate MOSFET	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US