博碩士論文 985301015 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	電機工程學系在職專班	zh_TW
DC.creator	江景淵	zh_TW
DC.creator	Ching-Yuan Chiang	en_US
dc.date.accessioned	2012-7-20T07:39:07Z
dc.date.available	2012-7-20T07:39:07Z
dc.date.issued	2012
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=985301015
dc.contributor.department	電機工程學系在職專班	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	本篇論文中，我們利用波松方程式（Poisson’s equation）、電子連續方程式、電洞連續方程式，將半導體元件轉換成等效電路，以此方式分析PNPN半導體的特性。利用三階段式的方式來探討PNPN元件的數值模擬，首先在一維的條件下建立模型，利用一維程式計算量較少的優勢，在較短的時間內獲得PNPN的數值分析；接著使用準二維模型，以較接近一維的方式，減少設計上的差異化，又可以作為進入二維設計的緩衝，最後，進入二維等效電路的模擬，將三階段的模擬結果做比較。最後針對程式開發過程中的經驗與心得進行探討，以降低二維PNPN模擬所遭受的痛苦。	zh_TW
dc.description.abstract	In this thesis, it transforms Poisson’s equation, electron continuity equation and hole continuity equation to equivalent circuit model for 1D and 2D numerical device simulation. This thesis uses the equivalent circuit model to simulate PNPN device. Firstly, this thesis builds 1D PNPN to quickly find the design parameters such as length and doping due to the fast calculation in 1D simulation. Secondly, this thesis develops quasi-2D simulation because the quasi-2D is very close to 1D simulation and it can be used to develop the complete 2D simulation for 2D PNPN design. This thesis compares the qusi-2D simulation result with that of the 1D simulation. Finally, this thesis develops the complete 2D modeling for 2D PNPN simulation, and it proposes some good suggestions for reducing the pain suffering during 2D PNPN simulation.	en_US
DC.subject	數值模擬	zh_TW
DC.subject	二維PNPN	zh_TW
DC.subject	numerical device simulation	en_US
DC.subject	2D PNPN	en_US
DC.title	三階段式的二維PNPN數值模擬	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	A three-stage method for 2D PNPN numerical device simulation	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US