| dc.description.abstract | In this thesis, high quality monolayer graphene were grown on Cu foil by chemical vapor deposition, and we manufacture multilayer graphene by stacking monolayer graphene. The propose of stacking multilayer graphene is to obtain optimum condition both in optical and electrical properties.
According to the results of Raman spectrum measurement, the full width at half maximum of G band and 2D band peaks are both smaller than 40 cm-1 and the ratio of 2D/G is larger than 1.5, which means the transferred graphene is monolayer. The average sheet resistivity of transferred graphene, which is measured by Hall measurement system, are about 2000 ohm/sq.
For the optical and electrical properties of stacked multilayer graphene, the transmittance, Raman spectrum, and Hall measurement were taken. The Raman spectrum results shows that the peak positions of G and 2D band didn’t shift and the 2D/G ratio were almost the same between one and stacked multilayer graphene. In addition, no shoulders were observed in the 2D peak of Raman spectrum that means there should be no interactions between layers. In the optical transmittance results, the absorption of multilayer graphene is about 3.1%/layer at 555 nm wavelength. The transmittance of three layers graphene is about 90%. In electrical properties, the sheet resistivity of graphene were decreased to 50% and 75% with stacked layer number was two and three layers, respectively. When the layer number was increased more than five layers, the sheet resistivity of multilayer graphene was close to HOPG.
In the thesis, we successfully manufacture certain layers graphene by stacking monolayer graphene. The sheet resistivity of stacked graphene was decreased and the optical transmittance of stacked graphene was above 90%.
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