博碩士論文 992206011 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	光電科學與工程學系	zh_TW
DC.creator	吳錚	zh_TW
DC.creator	Cheng Wu	en_US
dc.date.accessioned	2013-1-18T07:39:07Z
dc.date.available	2013-1-18T07:39:07Z
dc.date.issued	2013
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=992206011
dc.contributor.department	光電科學與工程學系	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	本研究特色是採用磁控濺鍍製作HIT太陽能電池，比起CVD製程磁控濺鍍有著便宜又無汙染且可低溫製程的優點，剛好能與HIT太陽能電池低溫製程的特性相匹配。 實驗中使用磁控濺鍍來成長含氫矽薄膜，藉由調變製程溫度以及製程氣體流量在矽基板上沉積本質氫化非晶矽薄膜當做鈍化層，使其載子生命週期經退火後量測能達到797μs。並將其運用於HIT太陽能電池上，於適當選擇薄膜製程條件下，可在平面型矽晶片獲得9.08%轉換效率的HIT太陽能電池。 關鍵字：載子生命週期、鈍化層、磁控濺鍍、HIT太陽能電池	zh_TW
dc.description.abstract	The Characteristic of this research is used Ratio-Frequency Sputtering to fabricate HIT solar cell. The advantage of Ratio-Frequency Sputtering is cheap、 no pollution and low temperature than CVD manufacture. Sputtering exactly can match the manufacturing characteristics with HIT solar cell. This experiment is used Ratio-Frequency Sputtering to glow hydrogenated amorphous silicon. Changing deposition temperature and gas flow to deposit intrinsic hydrogenated amorphous silicon on silicon wafer for passivation, lifetime can reach 797μs after furnace then use the result to HIT solar cell, finally can get 9.08% efficiency HIT solar cell in appropriate deposition condition. Keyword：Lifetime、Passivation、Ratio-Frequency Sputtering、HIT Solar Cell	en_US
DC.subject	載子生命週期	zh_TW
DC.subject	鈍化層	zh_TW
DC.subject	磁控濺鍍	zh_TW
DC.subject	HIT太陽能電池	zh_TW
DC.subject	Lifetime	en_US
DC.subject	Passivation	en_US
DC.subject	Ratio-Frequency Sputtering	en_US
DC.subject	HIT Solar Cell	en_US
DC.title	以射頻濺鍍製作HIT太陽能電池之研究	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Research on HIT Solar Cell using Radio-frequency Sputtering	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US