| dc.description.abstract | The semiconductor manufacturing technology follows the Moor’s law in the past. The development of the semiconductor industry has entered the nanoscale process, such as the 28 nm and the 22 nm. Silicon on insulator, SOI, which has the material structure can solve the problem of the devices been manufactured to be smaller with the traditional bulk silicon wafer, such as the parasitic capacitance, the latch-up, short channel effects, the substrate leakage current and overheating, and so on. Smart-CutR process is a common technology for manufacturing the SOI material. By implanting the high doses of hydrogen ion into the silicon wafer, wafer bonding process and annealing process, the hydrogen ions will accumulate and thus create cracks to finish thin film transfer. The ions implantation equipment is easy to cause damage because of high ion implanting doses into silicon wafer, and which is expensive. It’s difficult to obtain over 1 micron of implanting depth. Thus, the UV-assisted electrochemical etching method can achieve thicker film transfer and the price is cheaper.
The purpose of this study is to use the UV-assisted electrochemical etching method, heavily doped P-type silicon wafer was electrochemically etched based on different etching parameters which forms a porous silicon (PS) bilayer. Then the PS wafer was annealed at the high temperature to manufacture the PS bilayer with a buried separation and recrystallization layer with a few micros thickness, which was the structure of the quasi-crystalline silicon.
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