| dc.description.abstract | In the semiconductor industry, the development of silicon on insulator (SOI) solves the happened problems of conventional bulk silicon, and improves the efficiency of solid state devices and reduces the loss of energy. It is usually using Smart-Cut to produce SOI, and it need following steps: wafer cleaning, the hydrogen implantation, wafer bonding, anneal and chemical mechanical polishing. On the stage of wafer bonding, wafer bonding strength needs 1.5 J/m2 on high temperature, in order to layer transfer, because the silicon films can’t bond the other wafer after peeling off wafer. But it’s easy to happen on this stage, the thermal stress for high temperature heating procedure that reduces producing yield rate, and conventional heating usually needs a long time to obtain high bonding strength. So we uses oxygen plasma to activate wafer surface, and using microwave replaces conventional heating, wafer bonding pair obtains high bonding strength at lower temperature and shorter time.
This study is about the effect of microwave irradiation for bonding strength after wafers are activated by oxygen plasma. In the experiment, the test chips activated by some parameter of oxygen plasma use different microwave power and control time, and then use crack-opening method to measure bonding strength and infrared image topography. In experimental results, three bonding pairs of Si/Si, Si/Ox, and Ox/Ox, after using microwave irradiation, their bonding strength increase on lower temperature and shorter time. It is especially that the binding pair Si/Ox after using 900W microwave and twenty minutes, its effect is the most obvious.
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