dc.description.abstract | In this study, chemical bath deposition (CBD) is applied to deposit β-In2S3 thin film on indium tin oxide coated glass (ITO), which can be used as the photoelectrode in photoelectrochemical production of hydrogen. The advantages of chemical bath deposition method are simple equipment, inexpensive and large area deposition. β-In2S3 can absorb ultraviolet and part of visible light, and has an extremely low toxicity so that it has large potential as the photoelectrode thin film. In our experiment, we investigate the crystal structure , morphology, optic property, and PEC performance under various working parameters, such as amount of nitric acid , number of thin film and stirring rate , thermal treatment temperature, cation and anion ratio, and bath temperature. The results show that the resulting β-In2S3 photoelectrode thin film has the direct band gap of 2.1 eV. With 100 mW/cm2(AM 1.5G) simulation sunlight as the light source, the photocurrent density of β-In2S3 photoelectrode thin film is 5.59 mA/cm2 at external voltage of 0 V(vs. Ag/AgCl), and 12 mA/cm2 at external voltage of 0.5 V(vs. Ag/AgCl), respectively. The photo-electric properties of the present thin film in better than that using the same process in literature before.
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