博碩士論文 995201002 完整後設資料紀錄

DC 欄位 語言
DC.contributor電機工程學系zh_TW
DC.creator枋泓志zh_TW
DC.creatorHong-Chih Fangen_US
dc.date.accessioned2012-7-9T07:39:07Z
dc.date.available2012-7-9T07:39:07Z
dc.date.issued2012
dc.identifier.urihttp://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=995201002
dc.contributor.department電機工程學系zh_TW
DC.description國立中央大學zh_TW
DC.descriptionNational Central Universityen_US
dc.description.abstract在本篇論文中,我們將推導三維圓球pn接面的電位、電場、空乏區寬度等的公式,比起一維的公式,三維圓球的公式變得很複雜,然而,經過簡單的計算,仍可得到球接面的空乏區寬度,我們也比較公式的結果與三維的數值模擬的結果。利用這些球接面的公式,我們可以更快速地觀察到空乏區寬度、最大電場、崩潰電壓等對球接面半徑的變化。同理,空乏區寬度、最大電場、崩潰電壓等對球接面參雜濃度的變化也可快速得到。 zh_TW
dc.description.abstractIn this thesis, we try to derive the analytical equations of the potential, the electric field, and the depletion width in a three-dimensional spherical pn junction. The analytical equations for spherical pn junction is more complex than that for 1D pn junction. However, the depletion width can be obtained by a simple calculation. We compare the analytical results with the results from 3D numerical simulation. With these analytical equations, we can quickly investigate the dependence of the depletion width, the maximum electric field, and the breakdown voltage on the radius of a spherical pn junction. Similarly, the dependence of the depletion width, the maximum electric field, and the breakdown voltage on the doping of a spherical pn junction can be obtained quickly. en_US
DC.subject二極體公式推導zh_TW
DC.subject圓球接面zh_TW
DC.subject三維PN接面zh_TW
DC.subjectthree-dimensional pn junctionen_US
DC.subjectspherical junctionen_US
DC.subjectdiode equation derivingen_US
DC.title三維圓弧接面PN二極體之特性公式推導與模擬zh_TW
dc.language.isozh-TWzh-TW
DC.title3D PN Diode Equation and Device Simulation with spherical Junctionen_US
DC.type博碩士論文zh_TW
DC.typethesisen_US
DC.publisherNational Central Universityen_US

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