博碩士論文 995301016 完整後設資料紀錄

DC 欄位	值	語言
DC.contributor	電機工程學系在職專班	zh_TW
DC.creator	林信安	zh_TW
DC.creator	Hsin-An Lin	en_US
dc.date.accessioned	2012-7-5T07:39:07Z
dc.date.available	2012-7-5T07:39:07Z
dc.date.issued	2012
dc.identifier.uri	http://ir.lib.ncu.edu.tw:88/thesis/view_etd.asp?URN=995301016
dc.contributor.department	電機工程學系在職專班	zh_TW
DC.description	國立中央大學	zh_TW
DC.description	National Central University	en_US
dc.description.abstract	於本篇論文中，主要探討如何改善既有的三維直角座標之P-N球接面模擬程式的電腦運算時間。我們利用了小角度的切割方式，將原本的元件，分成矽與二氧化矽兩個部份，其中矽是一小部分的體積，二氧化矽是滿足元件必須是長方體的填充物。如此一來，我們在最簡單的三維直角座標環境之下，可以將模擬的時間，改善到只需要原本的百分之一即可。然後，進一步的探討，經由改善之後的程式來模擬P-N接面的各種不同參數之設定，結果是合理的，證明了我們所開發的環境是沒有問題，具有參考價值的。	zh_TW
dc.description.abstract	In this thesis, the major discussion is to improve the computer calculation time with the original simulation program in 3D rectangular coordinates. The small-angle method is used to divide the original silicon component into two parts. One is silicon region and the other is silicon-oxide region. The silicon region is inside the small-angle region, and we use the added silicon-oxide region to meet the simulation in 3D rectangular coordinates. Using this method, the simulation time is reduced to only one percent of the original. Further, the developed method is verified for its validity by the test with different parameters. So the small-angle method in 3D rectangular coordinates is workable and valuable.	en_US
DC.subject	小角度	zh_TW
DC.subject	三維直角座標	zh_TW
DC.subject	PN球接面	zh_TW
DC.subject	small-angle method	en_US
DC.subject	spherical PN junction	en_US
DC.subject	3D rectangular coordinates	en_US
DC.title	三維直角座標之小角度PN球接面崩潰模擬與分析	zh_TW
dc.language.iso	zh-TW	zh-TW
DC.title	Breakdown simulation of a spherical PN junction with a small-angle method in 3D rectangular coordinates	en_US
DC.type	博碩士論文	zh_TW
DC.type	thesis	en_US
DC.publisher	National Central University	en_US