dc.description.abstract | In this dissertation, three type millimeter-wave on-chip antennas based on Integrated Passive Device (IPD) technology are presented. The first part of the dissertation focuses on using CMOS/IPD flip-chip cavity to achieve dual-band operation. In Chapter II, a dual-band antenna-in-package for millimeter-wave applications is presented. The proposed antenna, which consists of a radiating slot and an air-filled cavity, is fed by a microstrip loaded with two tuning open-circuited stubs through a coupling C-shape aperture to achieve dual-band characteristics. The air-filled cavity, which is formed by the space between CMOS chip and IPD substrate after flip-chip assembly process, can reduce loss and improve antenna gain. Simulation and measurement regarding antenna reflection coefficient, radiation pattern, and peak gain are conducted for design validation. The measured results show that the antenna can operate in V-band and E-band, and the impedance bandwidths with the reflection coefficient less than -10 dB are 6.1 % and 5.8 %, respectively. The measured gains are -2 dBi at 58 GHz and 0.3 dBi at 77 GHz, respectively. The proposed antenna is well suited for dual-band millimeter-wave high data rate wireless communication systems.
The second part of the dissertation focuses on millimeter-wave circularly polarization antenna designs using bond-wire radiators. In Chapter III, a V-band wide-beamwidth left-handed circularly polarized wire-bond antenna is presented. The proposed design, which is implemented by using Integrated Passive Device (IPD) process, consists of a 1-to-4 series-type ring-shape microstrip power divider and four bond-wire radiators. The design of bond-wire radiator with wide-beamwidth characteristic is described. The design method of power divider is also explained in details. The proposed antenna has been fabricated and measured. The area of the fabricated antenna is of 2.2 x 2.2 . The simulation and measurement regarding antenna reflection coefficient, radiation pattern, peak gain, and axial ratio are conducted for design validation. The measured results show that the antenna can operate in V-band and the impedance bandwidth with less than -10 dB is from 51 GHz to 67 GHz or more ( > 28% ). The measured peak gain is -0.8 dBi at 58 GHz. The measured axial ratio is less than 3 dB from 55 GHz to 65 GHz. The simulated 3-dB antenna beamwidth is more than 180 degrees.
The last part of the dissertation focuses on millimeter-wave IPD dielectric resonator antenna design using bond-wire feeding structures. In Chapter IV, a V-band chip-level dual-polarized dielectric resonator antenna (DRA) implemented by using bondwires and silicon-based integrated passive device (IPD) technology is proposed. The square-shaped resonator is fed by two bondwire coupling structures which excite two degenerate modes orthogonal to each other. The resonance of bondwire itself is also found to enhance the antenna bandwidth to cover the 60-GHz band. Reasonable agreement between the simulation and measurement is obtained. The measured antenna bandwidth is from 52.8 GHz to 65 GHz. The measured isolation is better than 20 dB at frequencies of interest. The measured antenna gain is 4.5 dBi at 60 GHz. The proposed design can provide further applications for circularly polarized systems.
Finally, a summary of the research results and future work are concluded in Chapter V.
| en_US |