博碩士論文 88222005 詳細資訊




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姓名 敦俊儒( Jun-Ru Dun)  查詢紙本館藏   畢業系所 物理學系
論文名稱 離子佈植摻雜氮化鎵薄膜的光、電、結構特性之分析
(Optical, Electrical, and Structure Analysis of Ion-implanted GaN)
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摘要(英) II
electrical properties transformed from p-type to n-type when the sample are annealed at the temperature higher than 850 oC and transformed to n+-type (n=-1X1019~-4X1019cm-3) when the temperature higher than 950 oC. When the annealing temperature is higher than 950 oC, the implanted samples have a factor of 100 times more free electrons than the samples annealed at the temperature lower than 850 oC.
論文目次 Abstract (in Chinese) ………………………………………..Ⅰ Abstract (in English) ………………………………………...Ⅱ Table of Contents ……………………………………………Ⅳ Table Captions………………………………………………..Ⅶ Figure Captions ……………………………………………...Ⅷ Chapter1. Introduction ………………………………… 1 1-1 Introduction of GaN 1-2 Background of Research on GaN Doped Chapter2. Ion-Implanted GaN ………………………… 4 2-1 The Growth of Wafer 2-2 Wafer Cutting and Cleaning 2-3 Ion-Implantation Method 2-3.1 Theory of ion implantation 2-3.2 Ion implantation method 2-4 Thermal Annealing 2-5 Zn- and Mg- Implanted GaN 2-6 Si- Implanted GaN Chapter3. Relates Analysis System ……………………19 3-1 Photoluminescence (PL)
IV
3-1.1 Theory of PL 3-1.2 PL measurement system 3-2 Hall Measurements 3-2.1 Theory of Hall effect 3-2.2 Hall measurement system 3-3 X-Ray Diffraction (XRD) 3-3.1 Theory of XRD 3-3.2 XRD measurement system Chapter4. Results and Discussions ……………………30 4-1 The Influence of The Annealing Ambient on Zn- and Mg- Implanted GaN 4-1.1 X-ray diffraction of implanted GaN 4-1.2 Photoluminescence of implanted GaN 4-1.3 Hall measurement of implanted GaN 4-1.4 Discussion 4-2 Characters of Si ion implantation in Mg: GaN 4-2.1 X-ray diffraction of implanted GaN 4-2.2 Photoluminescence of implanted GaN 4-2.3 Hall measurement of implanted GaN 4-2.4 Discussion V
Chapter5. Conclusions and Future Work ………………60 5-1 Conclusions 5-2 Future work Reference ………………………….…………………………64
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指導教授 紀國鐘(Gou-Chung Chi) 審核日期 2001-7-9
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