透明導電膜功函數對矽異質接面太陽能電池之影響

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姓名

周世欽(Shi-Qin Zhou) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

透明導電膜功函數對矽異質接面太陽能電池之影響
(Effect of Transparent Conductive Oxide Work Function on Silicon Heterojunction Solar Cell)

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摘要(中)

本實驗分為兩大方向來討論，其一是透明導電膜ITO單層膜的分析，第二是ITO應用於矽異質接面太陽能電池探討。ITO單層膜主要分兩大主軸，優化光電特性以及提高功函數；優化光電特性部分，我們利用改變製程功率以及溫度，得到ITO最佳的電阻率為1.21x10-4 (Ω-cm)，在波長400~1100 nm下最佳的平均穿透率為82.97%；也利用不同製程環境得到功函數4.36~5.20 eV的分佈範圍。
電池元件討論部分將ITO分為兩層鍍製，和P層接觸的下層ITO，討論功函數對電池的影響；上層ITO為傳導層，具備良好的光電特性。根據本實驗結果，當功函數越高，電池的開路電壓明顯提高，元件效率也提升。當ITO功函數為4.36 eV，光電轉換效率為3.8%；若將功函數提升為5.20 eV可得最佳轉換效率8.3%。

摘要(英)

The experiment discussed in two parts, one of which was analysis single layer of transparent conductive oxide ITO, and the other was discussion ITO applied in heterojunction solar cells. In the research, we optimized ITO electrical and optical properties with sputtering different deposition parameters. In our study, the lowest value of resistivity was 1.21x10-4 (Ω-cm) and the best average optical transmittance was 82.97% in the range of 400~1100 nm. Besides, we can control ITO work function range from 4.36 eV to 5.20 eV.
In this study, we deposited two layers different properties ITO thin films on silicon heterojuction solar cell. ITO film that contacted with amorphous P-type silicon was used to discuss the relation between work function and cell efficiency. The upper ITO was conductive layer, and it has excellent electrical and optical properties. According to the results, the efficiency and open circuit voltage of cells were better when sputtering ITO with higher work function. ITO films with work function 4.36 eV, the photoelectric conversion efficiency was 3.8%. The best conversion efficiency was 8.3 % with highest ITO work function 5.20 eV.

關鍵字(中)

★ 功函數
★ 異質接面太陽能電池
★ 氧化銦錫

關鍵字(英)

★ work function
★ ITO
★ heterojunction solar cell

論文目次

第一章緒論 1
1-1 前言 1
1-2 太陽能電池的分類 1
1-3 矽晶異質接面太陽能電池簡介 3
1-4 研究目的與動機 4
1-5 論文架構 6
第二章基礎理論 7
2-1 太陽能電池工作原理 7
2-2 電漿濺鍍原理 9
2-3 透明導電膜 10
2-3-1 簡介 10
2-3-2 ITO薄膜的電學特性 11
2-3-3 ITO薄膜的光學特性 13
2-4 半導體能階與功函數相關理論 14
2-4-1 電子的平衡分佈 14
2-4-2 電子濃度和功函數關係 15
第三章實驗流程與量測分析工具 17
3-1 導電膜ITO實驗步驟 17
3-1-1 探討光電特性之ITO薄膜成長條件 18
3-1-2 探討功函數之ITO薄膜成長條件 19
3-2 矽晶異質接面太陽能電池製作 20
3-3 量測與分析工具 21
3-3-1 X光繞射儀(X-ray diffractometer，XRD) 21
3-3-2 霍爾效應量測(Hall effect measurement) 22
3-3-3 四點探針(Four Point Probe) 23
3-3-4 紫外光電子能譜儀(Ultraviolet Photoelectron Spectroscopy，UPS) 24
3-3-5 表面輪廓儀(α-step) 25
第四章實驗結果與討論 26
4-1 較佳光電特性之ITO製備與分析 26
4-1-1 電性探討 26
4-1-2 光學特性探討 28
4-1-3 晶格結構分析 30
4-2 較高功函數ITO製備與分析 32
4-2-1 電性探討 32
4-2-2 晶格結構分析 34
4-2-3 功函數量測分析 35
4-3 模擬討論ITO功函數對異質接面太陽能電池效率影響 37
4-4 ITO薄膜應用於異質接面太陽能電池之效率分析 41
4-4-1 ITO膜厚分析 41
4-4-2 有無ITO薄膜對元件效率影響 42
4-4-3 ITO功函數對元件效率的影響 44
4-4-4 討論高功函數ITO膜厚對元件效率之影響 50
第五章結論 53
參考文獻 55

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2013-8-30

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