博碩士論文 100256012 詳細資訊




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姓名 劉俊賢(Chun-hsien Liu)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 複合陣列微米與次微米藍寶石結構對LED整體出光效率
(The complex array sapphire structure on the LED overall light extraction efficiency)
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摘要(中) 本論文是討論複合陣列微米與次微米藍寶石結構對LED出光效率研究,進行實際的實做與分析,設定三個實驗方向
1.有無圖形式否會增加亮度。
2.次微米與微米結構間亮度差異。
3.次微米不同寬高比結構對光萃取效率的影響。
為了解這三種實驗假設的結果,利用奈米壓印技術與乾蝕刻實現所需晶片,為增加實驗結果可靠度,將實驗晶片分兩批磊晶,每組皆投入5種晶片。
實驗一:有圖形亮度提高59%至87%。
實驗二:次微米較微米結構亮度提高10%~18%。
實驗三:實驗片中最大寬高比較最低寬高比亮度會多3%到5%。
摘要(英) The study discusses about the complex array and sapphire structure on the LED in an overall light extraction efficiency. The study composed of experiments and analyses. I came out with three experiments.

1. If there are presence of photos or not, it will increase it′s lights.
2.The amount of lightness between submicron and micron structure.
3.The width and height of submicron and how does it influence light extraction efficiency.
In order to know about these experiments′ results, I use chips from nano-imprint and dry etching, and I want to increase the reliability of the result of the experiment, so I will separate the chips to two batch of epitaxy. In each group, I distributed five chips.
Experiment 1: The chip with a photo increase it′s light 59% up to 87%.
Experiment 2: Light in submicron is so higher than in micron by 10% to 18%.
Experiment 3: The biggest width and height of the chips are better than the smallest one, more than 3% to 5%.
關鍵字(中) ★ LED出光效率
★ 微米與次微米架構
關鍵字(英) ★ LED light efficiency
★ micron and sub-micron structure
論文目次 摘要 ..................................................... 1
Abstract ................................................. 2
誌謝 ..................................................... 3
目錄 ..................................................... 4
圖表目錄 ................................................. 7
第一章 緒論 ............................................. 1
1.1 前言 ............................................. 1
1.2 研究動機 ......................................... 2
1.3 論文架構 ......................................... 2
第二章 LED 發光原理 ...................................... 4
2.1 發光效率 ......................................... 7
2.1.1 光萃取效率 ..................................... 7
2.1.2 外部量子效率 ................................... 8
2.1.3 螢光粉轉換效率 ................................. 8
2.1.4 視效效能轉換 ................................... 9
2.1.5 LED 整體轉換過程與效率 ......................... 10
2.1.6 全反射損耗(Total Internal Reflection, TIR) .... 11
2.1.7 Fresnel 損耗(Fresnel Loss) .................... 13
2.1.8 材料吸收效應 .................................. 14
2.2 LED 晶片光萃取結構 ................................. 15
2.2.1 電流阻障層(Current Blocking Layer, CBL)和窗口層
(Window Layer) ..................................... 15
2.2.2 底部反射層(Bottom Reflector) .................. 17
2.2.3 晶圓接合(Wafer Bonding)和覆晶接合(Flip Chip) .. 18
2.2.4 晶片塑形(Chip Shaping, CS) .................... 20
2.2.5 表面粗化(Surface Texture, ST) ................. 22
2.2.6圖形化藍寶石基板(Patterned Sapphire Substrate, PSS)
…………………………………………………………….23
2.3 白光LED 螢光粉封裝出光效率機制 .................. 24
第三章 圖形化藍寶石基底製作 ............................ 28
3.1 人工藍寶石製作 .................................. 28
3.1.1 柴氏拉晶法 .................................... 28
3.1.2 凱氏長晶法 .................................... 30
3.1.3 製作藍寶石平片 ................................ 32
3.2 圖形化製作過程 .................................. 33
3.2.1 奈米壓印 ...................................... 33
3.2.2 濕式蝕刻技術 .................................. 33
3.2.3 乾式蝕刻技術 .................................. 34
第四章 原件製作步驟與實驗結果 ........................... 36
4.1 壓印製作圖形化藍寶石基板 ........................ 37
4.1.1 壓印UV 光阻劑成型 ............................. 37
4.1.2 乾蝕刻成型 .................................... 39
4.1.3 電子顯微鏡檢驗結果 ............................ 40
4.2 磊晶結果與效率分析 .............................. 44
4.2.1 電性結果 ...................................... 44
4.2.2 發光特性結果 .................................. 46
4.2.3 結果分析 ...................................... 47
第五章 結論與未來展望 ................................... 48
5.1 結論 ............................................ 48
5.2 未來展望 ........................................ 48
參考文獻 ................................................ 50
參考文獻 參考文獻
[1] http://www.niia.tw/ 經濟部國家發明獎
[2] LEDinside, TrendForce Corp., http://www.ledinside.com.tw/
[3] E. F. Schubert, Light-Emitting Diodes, 2nd ed. Cambridge University Press, Cambridge, 2006
[4] D. A. Neamen, Semiconductor Physics and Devices McGraw-Hill, New York, 2003.
[5] 維基百科Wikipedia, http://www.wikipedia.org/.
[6] E. F. Schubert, Light-Emitting Diodes, 2nd ed. Cambridge University Press, Cambridge, 2006
[7] 1郭浩中、賴芳儀和郭守義,LED 原理與應用,p2-3,五南書局,臺北市,中華民國九十八年。
[8] 1郭浩中、賴芳儀和郭守義,LED 原理與應用,p19-20,五南書局,臺北市,中華民國九十八年。
[9] 郭浩中、賴芳儀和郭守義,LED 原理與應用,p138-242,五南書局,臺北市,中華民國九十八年。
[10] H. C. Wang, Y. K. Su, Y. H. Chung, C. L. Lin, W. B. Chen, and S. M. Chen, “AlGaInP light emitting diode with a current-blocking structure,” Solid-State Electronics 49, 37-41 (2005.
[11] C. A. Gaw, S. Ariz, D. L. Rode, St. Louis, “Electrical Contact for an LED,” U.S. Pat. 4,864,370 (1989).
[12] M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Carford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” IEEE J. Disp. Techno. 3, 160-175 (2007).
[13] R. H. Horng, D.S. Wuu, S. C. Wei, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin,“AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology,” Appl. Phys. Lett. 75, 154-156 (1999).
[14] R. H. Horng, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu,and K. C. Lin, “AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding,” Appl. Phys. Lett. 75, 3054-3056 (1999)
[15] F. A. Kish and R. M. Fletcher, “AlGaInP light-emitting diodes” in High Brightness Light-Emitting Diodes Academic, San Diego, (1997).
[16] F. A. Kish, F. M. Sterakna, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high - efficiency semiconductor wafer-bonded transparent-substrate In P/GaP light-emitting diodes,” Appl. Phys. Lett. 64, 2839-2841 (1994).
[17] R. H. Horng, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin, “AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding,” Appl. Phys. Lett. 75, 3054-3056 (1999).
[18] Osram Opto Semiconductors, http://www.osram-os.com/.
[19] M. R. Krames, M. O. Holcomb, G. E. Hofler, C. C. Coman, E. I. Chen, I. H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J. W. Huang, S. A. Stockman, F. A. Kish, and M. G. Craford, “High-power truncated-pyramid (Al x Ga 1-x ) 0.5 In 0.5 P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett. 75, 2365-2367 (1999).
[20] E. Yablonovitch, “Inhibited Spontaneous Emission in Solid-State Physics and Electronics,” Phys. Rev. Lett. 58, 2059-2062 (1987).
[21] S. John, “Strong localization of photons in certain disordered dielectric superlattices,” Phys. Rev. Lett. 58, 2486-2489 (1987).
[22] Panasonic, http://www.panasonic.co.jp/.
[23] I. Schnitzer, E. Yablonvitch, C. Carneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light emitting diodes,” Appl. Phys. Lett. 63, 2174-2176 (1993).
[24] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84, 855-857 (2004).
[25] D. S. Han, J. Y. Kim, S. I. Na, S. H. Kim, K. D. Lee, B. Kim and S.J.Par“Improvement of light extraction efficiency of flip-chip light-emitting diode by texturing the bottom side surface of sapphire substrate,” IEEE Photo. Techno. Lett. 18, 1406-1408 (2006).
[26] Y. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, “High Brightness GaN-Based Light-Emitting Diodes,” Journal of Display Technology 3, 118-125 (2007).
[27] 郭浩中、賴芳儀和郭守義,LED 原理與應用,p294-301,五南書局,臺北市,中華民國九十八年。
[28] Philip Lumileds Lighting, http://www.lumileds.com/.
[29] C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, “Optimization of electroluminescent efficiencies for vapor-grown GaAsP diodes” J. Electrochem. Soc. 116, 248-253 (1969).
[30] 李宗憲,氮化鎵發光二極體之光萃取效率分析與晶片設計,國立中央大學光電科學研究所博士論文,p50-51,中華民國九十七年。
[31] actc鑫晶鑽科技http://www.teraxtal.com/
[32] http://i.chinatungsten.com/钨在线文库网
[33] 圖形化藍寶石基板於發光二極體研究 研究生張育嘉 指導教授張正陽 教授
[34] 日立 http://www.hitachi-hitec.com/
[35] 科技台灣http://www.hightech.url.tw/
指導教授 張榮森(Zong-shen Chang) 審核日期 2014-7-25
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