多晶矽阻擋層阻擋離子佈植雜質之研究

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姓名

范哲銘(ju-ming Fan) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

多晶矽阻擋層阻擋離子佈植雜質之研究
(nono)

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摘要(中)

在半導體產業中，SOI的發展解決了傳統矽材的問題，提昇了固態元件的效率和降低能量損耗，而通常是利用智切法來製作SOI材料。在智切法的步驟中，我們將離子佈植的步驟，改用Ion Shower設備來替代一般的Ion Beam，發現了共同佈植而造成雜質一起植入矽晶圓的問題。
　　本研究目的在於，利用Ion Shower設備來進行氫離子佈植。實驗過程中因為此設備無質譜儀，所以佈植時將不同的元素共同佈植進入了矽材裡。為了避免共同佈植，我們在晶圓上沉積了一層多晶矽層，利用此結構來阻擋氫以外的元素進入矽層裡。之後再以CMP的方式把多晶矽層移除。

摘要(英)

In the semiconductor industry, the development of silicon on insulator (SOI) solves the happened problems, and improves the efficiency of solid state devices and reduces the loss of energy.It is usually using Smart-Cut to produce SOI.In Smart-Cut steps, The ion implantation step to switch the Ion Shower devices to replace the Ion Beam, found the co-implanted with impurities implanted silicon wafer.
　　This study is about the Ion Shower devices to hydrogen ion implantation. No mass spectrometer during the experiment in this devices, implant the different elements co-implanted into the silicon wafer.In order to avoid co-implanted,layer of polysilicon layer is deposited on the wafer, with this structure to the barrier element other than hydrogen into the silicon layer inside. After polysilicon layer removed by CMP.

關鍵字(中)

★ 多晶矽
★ 阻擋

關鍵字(英)

論文目次

摘要 ................................ ..................... I
AbstractAbstractAbstractAbstractAbstractAbstractAbstractAbstract ................................ ................ II
致謝 ................................ ................... IIIIIIIII
目錄 ................................ .................... IV
圖目錄 ................................ .................. VI
表目錄 ................................ ................ VIIIVIIIVIIIVIII
第一章緒論第一章緒論 ................................ ............... 1
1.11.11.1研究背景 ................................ .......... 1
1.21.21.2研究動機 ................................ .......... 3
第二章文獻回顧文獻回顧 ................................ ......... 8
2-1離子佈植技術離子佈植技術 ................................ ...... 8
2-1-1 離子佈植的基本理論 .............................. 8
2-1-2 離子佈植造成的矽基材損傷[34,35] ................... 10
2-2氫離子佈植之薄膜轉移氫離子佈植之薄膜轉移氫離子佈植之薄膜轉移 ............................. 11
2-3氫在半導體晶圓之現象氫在半導體晶圓之現象氫在半導體晶圓之現象 ............................. 12
2-4半導體晶圓鍵合技術（半導體晶圓鍵合技術（半導體晶圓鍵合技術（ Wafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding TechnologyWafer Bonding Technology） ... 14
2-5 智切法 (Smart(Smart(Smart(Smart(Smart(Smart-CutCutCut®)[9][10][27] .......................... 15
V
第三章實驗準備與研究步驟實驗準備與研究步驟實驗準備與研究步驟 .............................. 21
3-1 實驗目的 ................................ ......... 21
3-2 研究步驟與方法研究步驟與方法研究步驟與方法 ................................ ... 21
第四章結果與討論結果與討論 ................................ ....... 30
4-1氫離子佈植影響氫離子佈植影響 ................................ ... 30
4-2 雜質的形成與阻擋雜質的形成與阻擋雜質的形成與阻擋 ................................ . 31
4-3多晶矽層移除多晶矽層移除 ................................ ..... 32
第五章結論 ................................ ............. 40
5-1 結論 ................................ ............ 40
參考文獻 ................................ ............. 41

參考文獻

參考文獻
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指導教授

李天錫

審核日期

2013-6-24

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