KY法生長大尺寸氧化鋁單晶之數值模擬分析

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吳東頤(Tung-Yi Wu) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

KY法生長大尺寸氧化鋁單晶之數值模擬分析

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摘要(中)

KY法在眾多長晶法中是最適合生長大尺寸晶體的長晶法。但在大尺寸坩堝生長藍寶石單晶時，因為爐內高溫無法直接觀察內部熱流場。因此需以模擬軟體計算生長過程，以求提升長晶良率，減少長晶成本。本研究中模擬KY法生長90公斤的藍寶石單晶。為避免高溫梯、爐體熔化與熱源浪費的現象，我們採用多重區段加熱KY爐。
本研究中採用有限元素法COMSOL軟體模擬藍寶石晶體長晶過程。本研究中模擬三種功率配比的長晶過程，而所使用的三種功率配比主要差別在上加熱器與中加熱器的相對大小，分別是0.8:1.0:0.4 (CASE1)、1.0:1.0:0.4 (CASE2)和1.2:1.0:0.4 (CASE3)。結果顯示上加熱器的大小影響上渦流的強度，當上渦流效應強大，會藉由流動使晶體往徑向生長且抑制軸向生長，所以產生了不同的固液界面。隨著熔湯減少使上渦流效應減弱，加速晶體軸向生長而減慢徑向生長，使晶體徑長小於晶肩徑長。在KY法生長大尺寸藍寶石晶體時，上加熱器的功率大小可有效控制生長晶體外型。在研究中比較了固液界面溫梯、所需總功率跟晶體形狀，發現加熱比例為1.2:1:0.4有較佳的長晶結果，但其中出現固化現象。因此修正加熱功率配比，以CASE3為初始值，僅調低上加熱器直到其值與中加熱器相同時，再將上加熱器與中加熱器維持同功率往下降。模擬結果不僅有好的溫梯與較低的加熱總功率，且晶體外型徑長也近似等徑長。
我們亦將各CASE的長晶階段模擬熱應力場分布，以確認在大尺寸藍寶石單晶生長過程中的熱應力變化，經過比較後發現在晶體生長過程中其晶體內熱應力值皆小於藍寶石晶體能承受的最大抗張強度(414MPa)。

摘要(英)

In crystal growth, Kyrupoulos method applies to grow large size crystal. During the large size sapphire crystal growth, it’s hard to observe temperature and flow inside the high temperature furnace. According to this reason, we need numerical simulation to calculate crystal growth, to improve the yield and to cost down. The thesis simulates 90kg large size sapphire crystal growth by Kyrupoulos method. In Kyrupoulos furnace, we use three heaters to avoid the high temperature gradient in crystal, crucible melting and thermal waste.
This study uses the COMSOL Multiphysics software to simulate large size sapphire crystal. We simulate three types of heater power ratios, 0.8:1.0:0.4(case1), 1.0:1.0:0.4(case2), 1.2:1.0:0.4(case3), differ from top and middle heater relative magnitude. The result shows top heater power effect the strength of cell. The strong cell makes crystal grow in radial direction and suppress its axial direction growth. Then produce different interface shape.
With melt reduce, upper cell gets weak. It accelerates crystal growth in axial direction, and the crystal diameter is less than crystal shoulder length. In the KY method growth large sapphire crystal, top heater power can control crystal shape effectively. We compare interface temperature gradient, total power and crystal shape. We find that heater power ratio 1.2:1:0.4 has better result, though it has solidification phenomena. We use case3 be the initial value to modify heater power ratio. Decreasing top heater power to be the same with middle heater power, then decrease top and middle heater power at the same time. The simulation result has good temperature gradient, lower total power and crystal ingot grow in same diameter. We also simulate thermal stress field distribution of every crystal growth stage. And get thermal stress variation in large sapphire crystal growth process. The result shows that the thermal stress of crystal is smaller than the maximum tensile strength of sapphire crystal (414MPa).

關鍵字(中)

★ 藍寶石
★ KY法
★ 大尺寸長晶

關鍵字(英)

★ Sapphire
★ Kyropoulos
★ Large crystal growth

論文目次

目錄
摘要 I
Abstract II
目錄 IV
圖目錄 VI
表目錄 VIII
符號說明 IX
第一章緒論 1
1-1 氧化鋁單晶簡介 1
1-2 KY法(Kyrupoulos Method) 2
1-3 文獻回顧 3
1-4 研究動機與目的 7
第二章系統描述與數學模式 11
2-1 物理系統與假設 11
2-2 數學模式 12
2-2-1熱流場統御方程式 12
2-2-2紊流模式與統御方程式 13
2-2-3熱應力場方程式 16
第三章數值模型 19
3-1 求解方法 20
3-2 網格選用與收斂測試 20
3-3 固化理論分析 21
3-4 KY爐之生長大尺寸晶體之參數分析 22
3-5 求解分析步驟 23
第四章結果與討論 27
4-1 KY爐之大尺寸晶體熱流場分析 27
4-2 分段式加熱KY爐之晶體生長分析 29
4-3 晶體等向應力分析 32
第五章結論與未來研究方向 55
5-1 結論 55
5-2 未來研究方向 56
參考文獻 57

參考文獻

1. 1. D.C. Harris, F. Schmid, D. R. Black, E. Savrun, H.E. Bates, “Factors that influence mechanical failure of sapphire at hightemperature,” SPIE, Vol. 3060, pp. 226-235, 1997.
2. D.C. Harris, F. Schmid, J.J. Mecholsky, Y.L. Tsai, “Mechanism of Mechanical Failure of Sapphire at High Temperature”, SPIE, Vol. 2286, pp. 16-25, 1994.
3. G.B. Stringfellow, “Organometallic Vapor Phase Epitaxy: Theory and Practice”, 1989.
4. M.L. Hitchamn, “Chemical Vapor Deposition: Principle and Application”, 1993.
5. Sugianto, R.A. Sani, P. Airfin, M. Budiman, M. Barmawi, “Growth of GaN "lm on a-plane sapphire substrates by plasma-assisted MOCVD” , Journal of Crystal Growth, Vol. 221 , pp. 311-315, 2000
6. J.S. Son, K.H. Baik, Y.G. Seo, H.Song, J.H. Kim, S.M. Hwang, T.G. Kim,” Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD” , Journal of Crystal Growth, Vol. 326 , pp. 98-102, 2011
7. M.S. Akselrod, F. J. Bruni, “Modern trends in crystal growth and new applications of sapphire”, Journal of Crystal Growth, In Press, Corrected Proof, 2012.
8. D. viechnicki, “crystal growth using the heat exchanger method” Journal of Crystal Growth, Vol. 26, pp.162-164, 1974.
9. H.J. Scheel, T. Fukuda, “The Development of Crystal Growth Technology ”, Crystal Growth Technology, pp. 3-14, 2003.
10. R. falckenberg, “growth of stoichiometric Mg-Al spinel single crystals by a modified verneuil technique”, Journal of Crystal Growth, Vol. 13, pp. 723-725, 1972.
11. G. Foulon, “Laser heated pedestal growth and optical properties of Yb3+-doped LiNbO3 single crystal fibers”, Journal of Crystal Growth, Vol. 245, pp. 555-560, 2000.
12. 劉哲銘，「以熱交換器法生長氧化鋁單晶與晶體檢測」，國立中央大學機械工程研究所碩士論文，1999。
13. 呂中偉，「以熱交換器法生長氧化鋁單晶之模擬分析」，國立中央大學機械工程研究所博士論文，2002。
14. 陳建宏，「柴式法生長氧化鋁單晶過程最佳化熱流場之分析」，國立中央大學機械工程研究所碩士論文，2008。
15. 陳恆超，「柴氏法生長氧化鋁單晶過程晶體內部輻射對於固液界面及熱應力之分析」，國立中央大學機械工程研究所碩士論文，2009。
16. 陳俊宏，「泡生法生長氧化鋁單晶之數值模擬分析」，國立中央大學機械工程研究所博士論文，2012。
17. 闕宜萱，「泡生法生長大尺寸氧化鋁單晶降溫過程中晶體熱場及熱應力分析」，國立中央大學機械工程研究所碩士論文，2012。
18. H.J. Sheel and T. Fukuda, “The Development of Crystal Growth Technology”, Crystal Growth Technology, pp.3-14, 2003.
19. C.W. Lu, J.C. Chen, “Numerical computation of sapphire crystal growth using heat exchanger method”, Journal of Crystal Growth, Vol. 225, P274, 2001.
20. J.C. Chen, C.W. Lu, “Influence of crucible geometry on the shape of the melt-crystal interface during growth of sapphire crystal using a heat exchanger method”, Journal of Crystal Growth, Vol. 266, P239, 2004.
21. C.W. Lu, J.C. Chen, “A numerical investigation of the thermal distribution effects in a heat-exchanger-method crystal growth system”, Modelling and Simulation in Materials Science and Engineering, Vol. 10, P147, 2002.
22. C.W. Lu, J.C. Chen, C.H. Chen, C.H. Chen, W.C. Hsu, C.M. Liu, “Effects of RF coil position on the transport processes during the stages of sapphire Czochralski crystal growth”, Journal of Crystal Growth, Vol. 312, P1074, 2010.
23. C.W. Lu, J.C. Chen, “Numerical simulation of thermal and mass transport during Czochralski crystal growth of sapphire”, Crystal Research and Technology - CRYST RES TECH, Vol. 45, P371, 2010.
24. Elena R. Dobrovinskaya, Leonid A. Lytvynov, Valerian Pishchik, Sapphire: Materials, Manufacturing, Applications. Springer, P3, 2009.
25. Musatov M.I. Heat-Resistant Dielectrics .Atomizdat, Moscow., pp.117-118, Russian, 1980.
26. Musatov M.I.: Book of Lectures of 1st International. School on Crystal Growth Technology, Switzerland., P264, 1998.
27. 許承海，孟松鶴，韓杰才，左洪波，張明福，汪桂根，G.Benik，「散熱參數對冷心放肩微量提拉生長藍寶石晶體影響的數值模擬」，矽酸鹽通報，第25卷第6期，56-61頁，2006年。
28. 姚泰，左洪波，孟松鶴，韓杰才，張明福，李常青，許承海，「SAPMAC 法生長大尺寸藍寶石單晶工藝研究」，哈爾濱工業大學學報，第19卷第5期，2007。
29. 許承海，杜善義，孟松鶴，韓杰才，汪桂根，左洪波，張明福，「藍寶石晶體熱性能的各向異性對SAPMAC法晶體生長的影響」，哈爾濱工業大學學報，第36卷第6期，2007。
30. 許承海，張明福，孟松鶴，左洪波，韓杰才，「藍寶石晶體熱物性能對SAPMAC法晶體生長影響的模擬分析」，哈爾濱工業大學學報，第36卷增刊2，2007。
31. 許承海，杜善義，孟松鶴，左洪波，韓杰才，「加熱功率波動對SAPMAC法挺生長的影響」，人工晶體學報，第36卷第2期，2007。
32. G.G Wang, M.F. Zhang, H.B. Zuo, C.H. Xu, H.E. Xiao-Dong, J.C. Han, “Dislocation analysis for large-sized sapphire single crytal grown by SAPMAC method”, Chinese Journal of Structural Chemistry, Vol. 26, P132, 2007.
33. S.E. Demina, E.N. Bystrova, M.A. Lukanina, V.M. Mamedov, V.S. Yuferev, E.V. Eskov, M.V. Nikolenko, V.S. Postolov, V.V. Kalaev, Numerical analysis of sapphire crystal growth by the Kyropoulos technique”, Optical Materials, Vol. 30, pp.62-65, 2007.
34. S.E. Demina, E.N. Bystrova, V.S. Postolov, E.V. Eskov, M.V. Nikolenko, D.A. Marshanin, V.S. Yuferev, V.V. Kalaev, “Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method”, Journal of Crystal Growth, Vol. 310,pp.1443-1447, 2008.
35. S.E. Demina, V.V. Kalaev, “3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth”, Journal of Crystal Growth, Vol. 320, pp. 23-27, 2011.
36. W.J. Lee, Y.C.Lee, H.H.Jo, Y.H.Park, “Effect of crucible geometry on melt convection and interface shape during Kyropoulos growth of sapphire single crystal”, Journal of Crystal Growth, Vol. 324, pp. 248-254, 2011.
37. C.H. Chen, J.C. Chen, C.W. Lu, C.M. Liu, “Numerical simulation of heat and fluid flows for sapphire single crystal growth by the Kyropoulos method”, Journal of Crystal Growth, Vol. 318, pp. 162-167, 2011.
38. C.H. Chen, J.C. Chen, C.W. Lu, C.M. Liu, “Effect of power arrangement on the crystal shape during the Kyropoulos sapphire crystal growth process”, Journal of Crystal Growth, Vol. 352, pp. 9-15, 2012.
39. M.S. Akselrod, F. J. Bruni, “Modern trends in crystal growth and new applications of sapphire” , Journal of Crystal Growth, Vol. 360, pp. 134-135, 2012.
40. N. Miyazaki, H. Uchida, T. Tsukada, T. Fukuda, “Quantitative assessment for cracking in oxide bulk single crystals during Czochralski growth: development of a computer program for thermal stress analysis”, Journal of Crystal Growth, Vol. 162, pp. 83-88, 1996.
41. Hu Henry and A.A. Stavors, “Mathematical modeking of solidification and melting: A review”, Modelling Simul. Mater. Sci. Eng. ,Vol.4, pp.371-394, 1996.
42. M.F. Modest, Radiaiative Heat Transfer, Acaddemic Press, Amsterdam , Boston,p.257, 2003.
43. K. Abe, T. Kondoh, Y Nagano, “A new turbulence model for predicting fluid flow and heat transfer in separating and reattaching flows—I. Flow field calculations”, International Journal of Heat and Mass Transfer, Vol.37, pp.139-151, 1994.
44. BUNG RYEOL SEO. B.E. , M.E. , “A NUMERICAL STUDY OF BUOYANT TURBULENT FLOWS USING LOW-REYNOLDS NUMBER k-e MODEL”,p117 , 2001.
45. Daniel.C, “Materials for infrared window and domes:properties and performance”, 1999.
46. C.H. Chen, J.C. Chen, Y.S. Chiue, C.H. Chang, C.M. Liu, C.Y. Chen, “Thermal and stress distributions in larger sapphire crystals during the cooling process in a Kyropoulos furnace”, 2013.

指導教授

陳志臣(Jyh-Chen Chen)

審核日期

2013-7-26

推文