L. Kadinski, V. Merai, A. Parekh, J. Ramer, E.A. Armour, R. Stall, A. Gurary, A, Galyukov, Yu. Makaro, “Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors,” Journal of Grystal Growth, Vol. 261, pp. 175-181, 2004.
 B. Mitrovic, A. Parekh, J. Ramer, V. Merai, E.A. Armour, L. Kadinski, A. Gurary, “Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors,” Journal of Grystal Growth, Vol. 289,pp. 708-714, 2006.
 B. Mitrovic, A. Gurary, L. Kadinski, “On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters,” Journal of Grystal Growth, Vol. 287, pp. 656-663, 2006.
 B. Mitrovic, A. Gurary, W. Quinn, ”Process conditions optimization for the maximum deposition rate and uniformity in vertical rotating disc MOCVD reactors based on CFD modeling,” Journal of Grystal Growth, Vol. 303,pp. 323-329, 2007.
 J.H. Han, D.Y. Yoon, “3D CFD for chemical transport in a rotating disk CVD reactor,” 3D Research Center and Springer, 2010.
 莊子慶，「MOCVD 腔體熱流場與新式進氣檔板之設計模擬分析研究」，國立中央大學，碩士論文，2013
 R.P. Pawlowski, C. Theodoropouls, A.G. Salinger, T.J. Mountziaris, H.K. Moffat, J.N Shadid, E.J. Thrush, ”Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design,” Journal of Grystal Growth, Vol. 221,pp. 622-628, 2000.
 T.C. Xenidou, A.G. Boudouvis, N.C Markatos, D. Samelor, F. Senocq, N. PrudHome, C. Vahlas, “An experimental and computational analysis of a MOCVD process for the growth of Al films using DMEAA,” Surface & Coatings Technology, Vol. 201, pp. 8868-8872, 2007.
 T.C. Xenidou, N. Prud′homme, C.Vahlas, N.C. Markatos, A.G. Boudouvis, “Reaction and transport interplay in Al MOCVD investigated through experiments and computational fluid dynamic analysis,” Journal of The Electrochemical Society, Vol. 157(12), pp. 633-641, 2010.
 R. Zuo, H. Yu, N. Xu, X. He, “Influence of Gas mixing and heating on Gas-Phase reactions in GaN MOCVD Growth,” ESC Journal of Solid State Science and Technology, Vol. 1(1), pp. 46-53, 2012.
 R. Beccard, D. Schmitz, E.G. Woelk, G. Strauch, Y. Makarov, M. Heuken, M. Deschler, H. Juergensen, “High temperature CVD systems to grow GaN or SiC based structures,” Materials Science and Engineering, B61-62, pp. 314-319, 1999.
 M. Dauelsberg, L. Kadinski, Y.N. Makarov, T. Bergunde, G. Strauch, M. Weyers, “Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor,” Journal of Crystal Growth, Vol. 208, pp. 85-92, 2000.
 M. Dauelsberg, M. Deufel, M. Reinhold, G. Strauch, “Equipment and process simulation of compound semiconductor MOCVD in the production scale Multiwafer Planetary Reactor,” Simulation of Semiconductor Process and Devices, 2001.
 郭文平,邵嘉平,羅毅,孫長征,郝智彪,韓彥軍, “MOCVD生長GaN材料的模擬,” Chinese Journal of Semiconductors, Vol. 26, No. 4, 2005.
 W.V. Lundin, E.E. Zavarin, D.S. Sizov, M.A. Sinitsin, A.F. Tsatsul’nikov, A.V. Kondratyev, E.V. Yakovlev, R.A. Talalaev, “Effect of reactor pressure and residence time on GaN MOVPE growth efficiency,” Journal of Crystal Growth, Vol. 287, pp. 605-609, 2006.
 M. Dauelsberg, C. Martin, H. Protzmann, A.R. Boyd, E.J. Thrush, J. Kappeler, M. Heuken, R.A. Talalaev, E.V. Yakovlev, A.V. Kondratyev, “Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors,” Journal of Crystal Growth, Vol. 298, pp. 418-424, 2007.
 C. Martin, M. Dauelsberg, H. Protzmann, A.R. Boyd, E.J. Thrsh, M. Heuken, R.A. Talalaev, E.V. Yakovlev, A.V. Kondratyev, “Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor,” Journal of Crystal Growth, Vol. 303, pp. 318-322, 2007.
 D. Brien, M. Dauelsberg, K. Christiansen, J. Hofeldt, M. Deufel, M. Heuken, “Modelling and simulation of MOVPE of GaAs-based compound semiconductors in production scale Planetary Reactors,” Journal of Crystal Growth, Vol. 303, pp. 330-333, 2007.
 C.S. Kim, J. Hong, J. Shim, Y. won, Y. Kwon, “Multiphysics Modeling and Design of Ultra large Multiwafer MOVPE React for Group III-Nitride Light Emitting Diodes,” IEEE on Thermal, 2010.
 D.A. Schmitz, S. Habermann, J. Hofeldt, D. Brien, B. Scheneller, M. Heuken, “ Application of adcanced Planetary Reactor technology for production of III-V compound semiconductor matericals for CPV on 6” Ge wafers,” IEEE, 2011.
 H. Shaolin, G. Zhiyin, Y. Han, L. Sheng, “A buffered distributed spray MOCVD reactor design,” IEEE International Conference on Electronic Packaging Technology & High Density Packaging, 2012.
 T. Ming-Lun, F. Cheng-Chia, L. Lung-Yu, “Numerical simulation of the temperature distribution in a planetary MOCVD reactor,” Chemical Engineering and Processing: Process Intensification, Vol. 81,pp. 48-58, 2014.
 D.I. Fotiadis, A.M. Kremer, D.R. Mckenna, K.F. Jensen, “Complex phenomena in vertical MOCVD reactors: effects on deposition uniformity and interface abruptness,” Journal of Crystal Growth, Vol. 85,pp. 154-164, 1987.
 A.G. Mathews, J.E. Peterson, “Flow visualizations and transient temperature measurements in an axisymmetric impinging jet rapid thermal chemical vapor deposition reactor,” ASME, 2002.
 Y.H. Liu, L.W. Tseng, C.Y. Huang, K.L. Lin, C.C. Chen, “Particle image velocimetry measurement of jet impingement in a cylindrical chamber with a heated rotating disk,” International Journal of Heat and Mass Transfer, Vol. 65, PP. 339-347, 2013.
 M. Masi, M.D. Stanislao, A. Veneroni, ”Fluid-dynamics during vapor epitaxy and modeling,” Progress in Crystal Growth and Characterization of Materials, Vol. 47,PP. 239-270, 2003.
 C.Y. Shin, B.J. Baek, C.R. Lee, B. Pak, J.M. Yoon, K.S. Park, “Numerical analysis for the growth of GaN layer in MOCVD reactor,” Journal of Crystal Growth, Vol. 247,pp. 301-312, 2003.