利用電子迴旋共振化學氣相沉積法製備多層SiOxNy:H/SiCxNy:H抗反射薄膜及其於矽基太陽能電池之應用

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姓名

林建安(Chien-an Lin) 查詢紙本館藏

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材料科學與工程研究所

論文名稱

利用電子迴旋共振化學氣相沉積法製備多層SiOxNy:H/SiCxNy:H抗反射薄膜及其於矽基太陽能電池之應用
(Characterization of multi-layered SiOxNy:H/SiCxNy:H antireflection coatings by electron cyclotron resonance chemical vapor deposition and their application on silicon solar cells)

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摘要(中)

對於太陽電池而言，擁有良好的抗反射塗層，可以減少光損耗，進而提高了光電轉換效率。氫化氮化矽層(SiNx：H）是使用最廣泛的矽晶體太陽能電池的單層抗反射膜（ARCS）。然而單層抗反射膜，只能在特定波長下獲得某個波段的最低反射率。為了進一步擴大抗反射波段，減少入射光在太陽能電池反射而損失，在許多研究紛紛提出由兩種以上不同的材料（如MgF2/CeO2，SiO2/TiO2和SiO2/SiNx）[1-3]的雙堆疊結構的抗反射層，相較於單層膜的僅單一波長抗反射，其擁比較寬的波長範圍內的抗反射效果。
在這項研究中，我們提出了一個新的抗反射結構，利用電子迴旋共振化學氣相沉積（ECRCVD）系統沉積SiOxNy:H/ SiCxNy:H的多層結構。藉由調整SiH4、CO2，CH4和N2等氣體的流量比，沉積SiOxNy:H和SiCxNy：H薄膜。經光譜橢偏儀測量的結果，調整不同流量比之SiOxNy:H和SiCxNy的折射率，可被調整在1.46〜2.05和2.06〜2.96 （633 nm）之範圍。
利用每一層薄膜的光學參數設計不同堆疊之抗反射層，並模擬SiOxNy:H/ SiCxNy:H多層結構的反射率、穿透率，經由模擬軟體優化厚度，最佳化之抗反射膜將藉由ECRCVD沉積於矽基板上，經UV-VIS分光光譜儀測量反射率，並和模擬結果進行比較。在單晶矽上反射率可降低至4.12%，而多晶矽上的抗反射率，可降到1.93%。並試圖將抗反射膜應用於多晶矽太陽能電池上，觀看其在電池上之表現。

摘要(英)

It is well-known that a good antireflective coating, which could reduce the photocurrent loss and enhance the photoelectric conversion efficiency, is important for solar cells. Hydrogenated silicon nitride layers (SiNx:H) are most widely used for crystalline silicon solar cells as single-layer antireflection coatings (ARCs). However, low reflectance could only be obtained from a single-layer ARC at a specific wavelength. In order to further minimize the front reflection of solar cells, double-layer ARCs consisting of two different materials (such as MgF2/CeO2, SiO2/TiO2 and SiO2/SiN) have been developed due to their low reflectance at a relatively wide wavelength range
In this study, we propose a new ARC structure of SiOxNy:H/SiCxNy:H multilayer films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) system. By adjusting the precursor gas flow ratios of SiH4、CO2、CH4 and N2, the composition of the SiOxNy:H and SiCxNy:H thin films could be adjusted. From our preliminary results, the refractive indexes of the SiOxNy:H and SiCxNy:H films measured by the spectroscopic ellipsometer are in a range of 1.46~2.05 and 2.06~2.96 (at 633 nm), respectively. These data will be used for the reflectance simulation to evaluate the performance of SiOxNy:H/SiCxNy:H multilayer structures and obtain the theoretically optimized thickness and optical parameters of each layer, which could be used as references for tuning the growth recipes of multi-layer SiOxNy:H/SiCxNy:H ARCs. After depositing the multi-layer ARCs on Si wafers, the reflectance will be measured by UV-VIS spectrophotometer and compared with the simulation results.

關鍵字(中)

★ 抗反射層
★ 氮氧化矽
★ 碳氮化矽

關鍵字(英)

★ Silicon oxynitride
★ Silicon carbonitride
★ Antireflection coatings

論文目次

摘要 I
ABSTRACT II
致謝 III
目錄 V
圖目錄 VIII
表目錄 X
第一章緒論 1
1-1序 1
1-2研究背景與動機 2
1-3文獻回顧 4
1-4太陽能電池介紹 9
1-4-1 太陽能電池分類 9
1-4-2太陽能光譜 10
1-4-3矽太陽能能電池光電轉換原理 11
第二章基本理論 13
2-1 抗反射層的原理 13
2-1-1 簡介 13
2-1-2 多層膜抗反射理論 15
2-1-3 薄膜優化 18
2-2薄膜簡介 19
2-2-1 SICXNY:H薄膜 19
2-2-2 SIOXNY:H薄膜 19
第三章實驗步驟 20
3-1 薄膜製備與分析 21
3-1-1 實驗步驟 22
3-2 抗反射層之模擬 24
3-2-1 TFCALC 簡介 24
3-2-2 模擬流程 24
3-3 抗反射層及電池製作 25
3-4 儀器分析 26
第四章實驗結果與討論 28
4-1 薄膜性質分析 28
4-1-1 A-SICXNY:H 28
4-1-2 A-SIOXNY:H 30
4-1-3 SICXNY和SINX吸收率之比較 33
4-2 抗反射層之模擬 35
4-2-1單層抗反射模擬結果 35
4-2-2 雙層抗反射模擬結果 37
4-2-3 三層抗反射模擬結果 40
4-2-4 模擬之多層抗反射層比較 42
4-3 實驗結果與模擬結果之比較 44
4-4 目前電池製作之結果與討論 47
4-4-1電池參數表現 47
4-4-2 表面鈍化 (SURFACE PASSIVATION) 48
第五章結論 50
參考文獻 51

參考文獻

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指導教授

陳一塵(I-chen Chen)

審核日期

2013-8-20

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