博碩士論文 100329011 詳細資訊




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姓名 黃韻如(Yun-Ru Huang)  查詢紙本館藏   畢業系所 材料科學與工程研究所
論文名稱 利用濕式氧化法製備氧化矽薄膜應用於矽晶太陽能電池表面鈍化技術之研究
(Investigating the Passivation Effect of Wet Oxidation Treatment on Silicon Solar Cells)
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摘要(中) 本研究利用濕式氧化法,浸泡矽晶圓在68 %的硝酸溶液中製備氧化矽薄膜 (nitric acid oxidation of silicon),搭配電子迴旋共振化學氣相沉積(electron cyclotron resonance chemical vapor deposition, ECRCVD)成長氮化矽薄膜堆疊於太陽能電池上,以達到表面鈍化的效果,探討其薄膜特性與其應用於元件上的表現。利用硝酸生成的氧化矽薄膜厚度在 1 ~ 2 nm 之間,與高溫成長的氧化矽相比,在很薄的情況下可以得到較高的緻密性和較低的漏電密度。
由於硝酸鈍化所形成的氧化層中,帶了少許的水氣與其他雜質,造成元件的不穩定與表面缺陷的產生。因此我們在硝酸形成氧化層之後,利用爐管通入不同的氣體修補表面的缺陷和去除水氣,經由電容-電壓量測和電流-電壓量測可得到氧化層的穩定度有進一步的提升。
本研究將針對在硝酸成長之氧化矽薄膜,在不同時間及熱處理下電容值的變化,分析氧化矽的性質。而後將氧化矽上堆疊氮化矽薄膜量測其載子生命週期,經由適當的熱處理可量測到載子生命週期達1700 us。最後將薄膜研究結果應用在單晶矽太陽能電池上,目前初步得到太陽能電池轉換效率(η) = 11.18 %;開路電壓(Voc) = 532 mV;短路電流(Jsc) = 36.72 mA/cm2;填充因子(FF) = 60.01 %。
摘要(英) In this study, we use wet oxidation to form silicon oxide films on silicon wafer in 68 % nitric acid. Electron cyclotron resonance chemical vapor deposition (ECRCVD) is used to growth silicon nitride films. We cap silicon nitride film on silicon oxide film, and to explore the film characteristics and the performance of monocrystalline silicon solar cells. The thicknesses of the silicon oxide layers grown under nitric acid is about 1~2 nm. Compare with the thermal growth of silicon oxide, the thin silicon oxide layers grown under nitric acid has high density quality and low leakage current.
It has some surface defect in the thin silicon oxide layers grown under nitric acid. After preparing silicon oxide layers grown under nitric acid, we add different gas to the furnace for thermal anneal to remove surface defect. We can know the quality of silicon oxide layers by capacitance-voltage and current-voltage measurement.
We investigate the change of capacitance in the silicon oxide layers grown under nitric acid with thermal annealing at different temperature. For the devices passivated by silicon oxide and silicon nitride, we can know that the lifetime elevates to 1700 us. Finally, we fabricate monocrystalline silicon solar cell with the optimized recipe of the passivation layer from the result that we investigated, and there we have the electro-optic convert efficiency = 11.18%, the open-circuit voltage (Voc) = 532 mV, short-circuit current density (Jsc) = 36.72 mA/cm2,and the fill factor (FF) = 60.01%.
關鍵字(中) ★ 鈍化
★ 氧化矽
★ 太陽能電池
關鍵字(英) ★ passivation
★ silicon oxide
★ solar cell
論文目次 摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 VI
表目錄 X
第一章 前言 1
第二章 文獻回顧 2
2.1 矽晶太陽能電池基本原理 2
2.1.1 太陽光光譜 2
2.1.2 太陽能電池的重要參數 3
2.2 表面鈍化膜之相關理論 9
2.2.1 缺陷及表面鈍化 9
2.2.2 硝酸鈍化 12
2.2.3 介面電荷密度測量與計算 15
2.2.4 載子生命週期量測 16
第三章 實驗流程 17
3.1 利用硝酸製備二氧化矽薄膜 17
3.2熱處理氧化矽薄膜 18
3.3製備氧化矽薄膜 18
3.4 元件製作流程 20
3.4.1 Metal-oxide-semiconductor (MOS) capacitor結構製作流程 20
3.4.2 太陽能電池結構製作流程 21
3.5 熱處理前後之薄膜特性分析與電池表現 23
3.5.1 光電子能譜儀 (x-ray photoelectron spectroscopy, XPS) 23
3.5.2 橢圓儀 (ellipsometer) 23
3.5.3 高頻capacitance-voltage 量測儀器 23
3.5.4 有效載子生命週期量測儀器 24
3.5.5 量子轉換效率(quantum efficiency, QE) 24
3.5.6 太陽模擬光量測系統(solar simulator) 24
第四章 結果與討論 26
4.1 氧化矽薄膜性質分析 26
4.1.1 利用橢圓儀量測氧化矽薄膜 26
4.1.2利用光電子能譜儀量測氧化矽薄膜 27
4.2 不同退火溫度和氣氛下氧化矽薄膜之特性分析 28
4.2.1 未經退火處理之氧化矽薄膜電性量測 28
4.2.2 經退火處理之氧化矽薄膜電性量測 30
4.3 兩階段硝酸處理之氧化矽薄膜電性分析 39
4.4 氧化矽上沉積氮化矽薄膜之載子生命週期量測 41
4.4.1 未經熱處理之氧化矽和氮化矽薄膜載子生命週期量測 41
4.4.2 經熱處理之氧化矽和氮化矽薄膜載子生命週期量測 43
4.4.3 沉積氧化矽和氮化矽薄膜在矽基板上進行熱處理載子生命週期量測 44
4.5 太陽能電池效率比較 47
第五章 結論 51
參考文獻 52
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指導教授 陳一塵(I-Chen Chen) 審核日期 2013-8-29
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