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In this chapter, we demonstrated two novel collector design to further improve the high-power performance of the UTC-PD. Detailed dynamic analysis of the device package at different photocurrents and reverse bias voltages suggests that non-equilibrium electron transport plays an important role in determining the maximum output power in the THz regime. In our summy, for new structure N-UTC-PD, it still has superiorly high bandwidth (~315GHz) performance, but the new structure also leads to degradation of output power(-3dBm@280GHz); for NBUTC-PD, it has better output power (-1.8dBm) and bandwidth (~325GHz), but it must need better heat dissipation to avoid thermal failure.
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