超高速覆晶式(>300GHz)高功率(~mW)光偵測器製作與量測

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姓名

林豐緯(Fung-Wei Lin) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

超高速覆晶式(>300GHz)高功率(~mW)光偵測器製作與量測

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摘要(中)

我們證實了近彈道單載子光二極體在次兆赫波的頻率範圍內把磊晶結構比例縮小是為高功率特性.比較UTC-PDs，NBUTC-PD提供一個比較高且最高限度的偏壓在近彈道電子傳輸，它改善輸出功率的特性。此外，一個小負載電阻(<50Ω)，這會犧牲輸出功率在最小化的輸出AC電壓擺幅在DC偏壓點時，這是沒必要的。按比例縮小NBUTC-PDs的收集層厚度及主動區面積，我們實現了一個大的光電響應頻寬(250GHz)和高飽和電流(17mA)，這是接近理論上的最大值在負載50Ω且-2V的偏壓下。

摘要(英)

We demonstrate a near-ballistic uni-traveling-carrier photodiode (NBUTC-PD) with a scaled-down epi-layer structure designed for high-power performance in the sub-THz frequency regime. Compared with UTC-PDs, NBUTC-PDs offer a higher optimum bias voltage for the near-ballistic transport of electrons, which leads to improvement in the output power performance. Furthermore, a small load resistance (< 50Ω), which would sacrifice the output power for minimizing the output AC voltage swing on DC bias point, is not necessary. By scaling down the collector layer thickness and active area of the NBUTC-PDs, we achieve a large optical-to-electrical bandwidth (250 GHz) and a high saturation current (17 mA), which is close to the theoretical maximum, under a 50Ωload and -2V bias.

關鍵字(中)

★ 近彈道單載子光二極體

關鍵字(英)

★ NBUTC-PD

論文目次

目錄
摘要 i
Abstract ii
致謝 iii
圖目錄 viii
表目錄 xii
第一章緒論 1
1.1光纖通訊之發展趨勢 1
1.2 光偵測器之發展與應用 7
1.3 覆晶結合技術之發展趨勢 11
1.4 元件的應用 14
1.5 論文動機與架構 17
第二章彈道傳輸單載子光偵測器設計 18
2.1 傳統P-I-N光偵測器工作原理 18
2.2 單載子傳輸光偵測器工作原理 20
2.3 近彈道單載子傳輸光偵測器工作原理 24
2.4 單載子傳輸光偵測器之結構設計 26
第三章超高速(~300GHz)近彈道單載子光二極體(NBUTC-PD)製程步驟與底座製程步驟 30
3.1 超高速(~300GHz)近彈道單載子光二極體(NBUTC-PD)製程 30
3.2 CPW及傳輸器底座電路製程 52
3.3元件與傳輸線基板結合(Flip-Chip Bond) 61
第四章彈道傳輸單載子光偵測器之量測與結果討論 64
4.1 Heterodyne-Beating 量測系統之架設 64
4.2 頻寬量測結果 65
4.3 高功率產生量測結果 70
第五章結論與未來研究方向 72
參考文獻 73

參考文獻

參考文獻
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指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2013-9-18

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