應用於850到1550 nm波長光連結且 具有高速,高效率和大面積的p-i-n光偵測器

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姓名

鄭穎鴻(Ying-hing Cheng) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

應用於850到1550 nm波長光連結且具有高速,高效率和大面積的p-i-n光偵測器
(High-Speed, High-Efficiency, and Large-Area p-i-n Photodiode for the Applications of Optical Interconnect from 0.85 to 1.55 um Wavelengths)

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摘要(中)

對於操作在大於25 Gbit/sec光波長範圍從0.85 μm到1.55 μm，我們提出新型有大主動區直徑的InP(磷化銦)光偵測器結構。在結構中0.85μm激發波長下，因為In0.53Ga0.47As有大的吸收常數(3 "μm-1" )，故P型In0.53Ga0.47As作為吸收層其且慢的電洞傳輸會被消除，由於RC限制頻寬和載子傳輸時間之間取得平衡，故(~4 μm)厚度In0.53Ga0.47As有著完美電子傳輸特性。此外，為了讓最上層P型In0.53Ga0.47As吸收層最大限度地減少嚴重的表面複合，故再P型In0.53Ga0.47As吸收層上加上一層P型In0.52AlxGa0.48-xAs漸變式摻雜層，漸變式摻雜層不僅能均勻吸收光，而且可以加快電子擴散。分別操作在波長0.85 μm到1.55 μm，偏壓-1V下，此元件實現了高速(14 和 22 GHz)和高響應度(0.25 和 0.9 A/W)。在兩個波長下,已證實資料傳輸高達30 Gbit/sec且清楚的看到眼圖(無誤碼）。

摘要(英)

We demonstrate a novel InP based photodiodes structure with large active diameters (55 "μ" m) for > 25 Gbit/sec operations at the optical wavelengths which range from 0.85 to 1.55 μm. By utilizing the large absorption constant (>3 "μ" m-1) of In0.53Ga0.47As based p-type absorption layer under 0.85 μm wavelength excitation, the slow hole transport can be eliminated in our structure and the trade-off between RC-limited bandwidth and carrier transient time can be greatly released due to the excellent characteristics of electron transport in the intrinsic and thick In0.53Ga0.47As layer (~4 μm). Furthermore, in order to minimize the serious surface (absorption) recombination in the top p-type In0.53Ga0.47As absorption layer, an additional p-type In0.52AlxGa0.48-xAs graded bandgap layer (GBL) is grown above it. Such GBL can not only uniform the profile of photo-absorption but also accelerate the electron diffusion process. Under -1 V bias, these devices can achieve high-speed (14 and 22 GHz), and high responsivity (0.25 and 0.9 A/W), at 0.85 and 1.55 μm wavelength operation respectively. Clear eye-opening (error-free) with data rate up to around 30 Gbit/sec have also been demonstrated in both wavelengths.

關鍵字(中)

★ 高速
★ 大面積
★ 光偵測器

關鍵字(英)

★ high speed
★ large area
★ photodiode

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 v
圖目錄 vi
表目錄 x
第一章序論 1
1-1 多媒體時代 1
1-2 光連結應用 1
1-3 同質接面之磷化銦光偵測器原理 11
1-4 設計大主動區直徑的同質接面之磷化銦光偵測器 18
1-5 論文動機 22
第二章高速光偵測器的設計原理及製作 25
2-1 元件磊晶結構設計 25
2-2 高速光偵測器之模擬與分析 28
2-3 元件製作步驟 32
第三章實驗與量測分析 44
3-1 實驗系統架設 44
3-2 量測結果與數據分析 47
第四章結論與未來展望 62
參考文獻 63

參考文獻

[1]C. L. Schow, F. E. Doany, C. Tsang, N. Ruiz, D. Kuchta, C. Patel, R. Horton, J.
Knickerbocker, and J. Kash “300-Gb/s, 24-Channel Full-Duplex, 850-nm, CMOS-Based Optical Transceivers,” in Proc. OFC 2008 , pp. OMK5, San Diego, CA, Feb., 2008.
[2]N. Savage, “Linking with Light,” IEEE Spectrum, vol. 39, issue 8, Aug. 2002.
[3]S. M. Sze, “Physics of Semiconductor devices,” John Wiley & Sons, 2nd Edition.
[4]Donald A. Neamen “Semiconductor physics & Devices Basic Principle,” second edition
[5]Hiroshi Ito, Satoshi Kodama, Yoshifumi Muramoto, Tomofumi Furuta, Tadao Nagatsuma, and Tadao Ishibashi, “High-Speed and High-Output InP–InGaAs Unitraveling-Carrier Photodiodes,” IEEE J. Quantum Electron., vol. 10, pp. 709–727, Jul./Aug. 2004
[6]J.-W. Shi, F.-M. Kuo, Chan-Shan Yang, S.-S. Lo, and Ci-Ling Pan, “Dynamic Analysis of Cascade Laser Power Converters for Simultaneous High-Speed Data Detection and Optical-to-Electrical dc Power Generation,” IEEE Trans. on Electron Device. vol. 58, pp. 2049-2056, July, 2011.
[7]X. Li, N. Li, S. Demiguel, J.C. Campbell, D. A. Tulchinsky, and K. J. Williams,“A
comparison of front and backside-illuminated high-saturation power partially depleted absorber photodetectors,” IEEE J. of Quantum Elec.,vol. 40,no. 9, pp.
[8]M. A. Taubenblatt, “Optical Interconnects for High-Performance Computing,” IEEE/OSA Journal of Lightwave Technology, vol. 30, No. 4, pp. 448-458, Feb., 2012.
[9]D. Bimberg, “Green Data and Computer Communication,” IEEE Photonic Society Meeting 2011, Arlington, VA, USA, Oct., 2011, pp. TuN3.
[10]K. Kurata, “High-Speed Optical Transceiver and Systems for Optical Interconnects,” Proc. OFC 2010, San Diego, CA, USA, March, 2010, pp. OThS3.
[11]J. A. Lott, A. S. Payusov, S. A. Blokhin, P. Moser, N. N. Ledentsov, and D. Bimberg, “Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/sec optical interconnects,” Phys. Status Solidi (C) 9, no. 2, pp. 290-293, Feb., 2012.
[12]N. Y. Li, C. L. Schow, D. M. Kuchta, F. E. Doany, B. G. Lee, W. Luo, C. Xie, X. Sun, K. P. Jackson, and C. Lei, “High-Performance 850 nm VCSEL and Photodetector Arrays for 25 Gb/s Parallel Optical Interconnects,” Proc. OFC 2010, San Diego, CA, USA, March, 2010, pp. OTuP2.
[13]W. Kobayashi, T. Tadokoro, T. Fujisawa, N. Fujiwara, T. Yamanaka, and F. Kano, “40-Gbps Direct Modulation of 1.3-m InGaAlAs DFB Laser in Compact To-CAN Package,” Proc. OFC 2011, Los Angele, CA, USA, March, 2011, pp. OWD2.
[14]E. Kapon and A. Sirbu, “Long-wavelength VCSELs: Power-efficient answer,” Nature Photonics, vol. 3, pp. 27-29, Jan., 2009.
[15]Y. Lee, D. Kawamura, T. Takai, K. Kogo, K. Adachi, T. Sugawara, N. Chujo, Y. Matsuoka, S. Hamamura, K. Yamazaki, Y. Ishigami, T. Takemoto, F. Yuki, H. Yamashita, and S. Tsuji, “25-Gb/s 100-m MMF Transmission Using a Prototype 1.3-m-Range CMOS-Based Transceiver for Optical Interconnections,” IEEE Photon. Technol. Lett., vol. 24, pp. 467-469, March, 2012.
[16]A. Mekis, S. Abdalla, D. Foltz, S. Gloeckner, S. Hovey, S. Jackson, Y. Liang, M. Mack, G. Masini, M. Peterson, T. Pinguet, S. Sahni, M. Sharp, P. Sun, D. Tan, L. Verslegers, B. P. Welch, K. Yokoyama, S. Yu, P. M. De Dobbelaere, “A CMOS photonics platform for High-Speed Optical Interconnects,” IEEE Photonic Society Meeting 2012, San Francisco, CA, USA, Sep., 2012, pp. TuQ2.
[17]Y. H. Huang, C. C. Yang, T. C. Peng, F. Y. Cheng, M. C. Wu, Y. T. Tsai, and C. L. Ho, “10-Gbps InGaAs p-i-n photodiodes with wide spectral range and enhanced visible spectral response,” IEEE Photon. Technol. Lett., vol. 19, pp. 339-341, May, 2007.
[18]X. Li, N. Li, S. Demiguel, X. Zheng, J. C. Campbell, H. H. Tan, and C. Jagadish, “A Partially Depleted Absorber Photodiode With Graded Doping Injection Regions,” IEEE Photon. Technol. Lett., vol. 16, pp.2326-2328, Oct., 2004.
[19]J.-W. Shi and C.-W. Liu, "Design and Analysis of Separate-Absorption-Transport-Charge-Multiplication Traveling-Wave Avalanche Photodetectors " IEEE/OSA Journal of Lightwave Technology, vol. 22, pp.1583-1590, June, 2004.
[20]K. Kato, “Ultrawide-Band/High-Frequency Photodetectors,” IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1265-1281, Jul., 1999.
[21]M. Levinshtein, S. Rumyantsev, and M. Shur, Handbook Series on Semiconductor Parameters, World Scientific, Singapore, 1996.
[22]Y.-S. Wu, J.-W. Shi, and P.-H. Chiu “Analytical Modeling of a High-Performance Near-Ballistic Uni-Traveling-Carrier Photodiode at a 1.55m Wavelength,” IEEE Photon. Technol. Lett., vol. 18, pp. 938-940, April, 2006.
[23]J.-W. Shi, F.-M. Kuo, and J. E. Bowers, “Design and Analysis of Ultra-High Speed Near-Ballistic Uni-Traveling-Carrier Photodiodes under a 50 Load for High-Power Performance,” IEEE Photon. Technol. Lett., vol. 24, pp. 533-535, April, 2012

指導教授

許晉瑋(Jin-wei Shi)

審核日期

2013-8-19

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